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Category:Ruilong Xie of Niskayuna NY (US)
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Pages in category "Ruilong Xie of Niskayuna NY (US)"
The following 200 pages are in this category, out of 214 total.
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- 17450121. VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN simplified abstract (International Business Machines Corporation)
- 17453882. GATE-ALL-AROUND NANOSHEET-FET WITH VARIABLE CHANNEL GEOMETRIES FOR PERFORMANCE OPTIMIZATION simplified abstract (International Business Machines Corporation)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17455937. REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457271. INTEGRATION OF HORIZONTAL NANOSHEET DEVICE AND VERTICAL NANO FINS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457444. TOP VIA WITH PROTECTIVE LINER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457448. NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457634. CHANNEL PROTECTION OF GATE-ALL-AROUND DEVICES FOR PERFORMANCE OPTIMIZATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457667. HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457686. METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17487301. LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17522974. GATE-CUT AND SEPARATION TECHNIQUES FOR ENABLING INDEPENDENT GATE CONTROL OF STACKED TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17524541. GATE CUT SUBSEQUENT TO REPLACEMENT GATE simplified abstract (International Business Machines Corporation)
- 17524851. SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS simplified abstract (International Business Machines Corporation)
- 17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17528279. TUNNEL FIELD EFFECT TRANSISTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17528391. VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17531837. BURIED POWER RAIL AFTER REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17534629. Reliability Macros for Contact Over Active Gate Layout Designs simplified abstract (International Business Machines Corporation)
- 17541529. Fork Sheet with Reduced Coupling Effect simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542662. SELECTIVE DIPOLE LAYER MODULATION USING TWO-STEP INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543028. GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17544328. WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545013. INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG USING LOW-TEMPERATURE PROTECTIVE LINERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545073. BURIED POWER RAIL AT TIGHT CELL-TO-CELL SPACE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545485. MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545501. CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVICES ON A SUBSTRATE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545635. STACKED CROSS-POINT PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545713. NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548751. CO-INTEGRATING GATE-ALL-AROUND NANOSHEET TRANSISTORS AND COMB NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550724. SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551402. FORMING NS GATES WITH IMPROVED MECHANICAL STABILITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551829. ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643202. LINER-LESS VIA CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643395. ADVANCED METAL INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644100. SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644528. CROSS BAR VERTICAL FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806280. VIA CONNECTION TO BACKSIDE POWER DELIVERY NETWORK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806292. STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806514. SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806602. HYBRID SIGNAL AND POWER TRACK FOR STACKED TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808116. POWER PLANES AND PASS-THROUGH VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808316. INTERCONNECT WITH TWO-DIMENSIONAL FREE ZERO LINE END ENCLOSURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808568. CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809076. STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837434. SKIP-LEVEL TSV WITH HYBRID DIELECTRIC SCHEME FOR BACKSIDE POWER DELIVERY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17849639. FORMING A FORKSHEET NANODEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17896278. Barrier-Less Jumper Structure for Line-to-Line Connections simplified abstract (International Business Machines Corporation)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17930739. GAA DEVICE WITH THE SUBSTRATE INCLUDING EMBEDDED INSULATING STRUCTURE BETWEEN BSPDN AND CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931145. A SINGLE BACKSIDE POWER PLANE FOR IMPROVED POWER DELIVERY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931767. INTEGRATED CIRCUIT CHIP WITH BACKSIDE POWER DELIVERY AND MULTIPLE TYPES OF BACKSIDE TO FRONTSIDE VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932347. VERTICAL NAND WITH BACKSIDE STACKING simplified abstract (International Business Machines Corporation)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)
- 17932679. BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (International Business Machines Corporation)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)
- 17933861. SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract (International Business Machines Corporation)
- 17934195. SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract (International Business Machines Corporation)
- 17936393. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17936825. METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract (International Business Machines Corporation)
- 17937431. POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract (International Business Machines Corporation)
- 17937955. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17938667. MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract (International Business Machines Corporation)
- 17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943602. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943799. LINE EXTENSION FOR SKIP-LEVEL VIA LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17944437. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945418. SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract (International Business Machines Corporation)
- 17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation)
- 17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17946546. STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract (International Business Machines Corporation)
- 17946740. VIA RESISTANCE TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17948664. FLEXIBLE WIRING ARCHITECTURE FOR MULTI-DIE INTEGRATION simplified abstract (International Business Machines Corporation)
- 17948877. NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (International Business Machines Corporation)
- 17949579. SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (International Business Machines Corporation)
- 17955974. Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract (International Business Machines Corporation)
- 17956114. SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 17956244. BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract (International Business Machines Corporation)
- 17956309. EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE simplified abstract (International Business Machines Corporation)
- 17956918. BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract (International Business Machines Corporation)
- 17957194. HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (International Business Machines Corporation)
- 17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)
- 17960116. INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 17960222. STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract (International Business Machines Corporation)
- 17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)
- 17961774. HIGH DENSITY TRENCH CAPACITOR simplified abstract (International Business Machines Corporation)
- 17963031. SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract (International Business Machines Corporation)
- 17963281. SKIP VIA WITH LATERAL LINE CONNECTION simplified abstract (International Business Machines Corporation)
- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17972892. Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)
- 18048877. ISOLATION RAIL BETWEEN BACKSIDE POWER RAILS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18049301. VIRTUAL POWER SUPPLY THROUGH WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18232640. MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240096699). SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract
- International business machines corporation (20240096751). SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract
- International business machines corporation (20240096752). VIA RESISTANCE TO BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240096783). FLEXIBLE WIRING ARCHITECTURE FOR MULTI-DIE INTEGRATION simplified abstract
- International business machines corporation (20240096786). SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract
- International business machines corporation (20240096794). VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract
- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
- International business machines corporation (20240096891). SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240096940). BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract
- International business machines corporation (20240096946). DUAL DIELECTRIC STRESSORS simplified abstract
- International business machines corporation (20240096949). DIODES IN NANOSHEET TECHNOLOGY simplified abstract
- International business machines corporation (20240096951). STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract
- International business machines corporation (20240096952). NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract
- International business machines corporation (20240096978). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240096983). SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract
- International business machines corporation (20240098961). SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract
- International business machines corporation (20240099011). VERTICAL NAND WITH BACKSIDE STACKING simplified abstract
- International business machines corporation (20240105244). STACKED FET WITH THREE-TERMINAL SOT MRAM simplified abstract
- International business machines corporation (20240105506). LOCAL LINE EXTENSION FOR ENLARGED VIA-TO-LINE CONTACT AREA simplified abstract
- International business machines corporation (20240105554). TRANSISTORS WITH VIA-TO-BACKSIDE POWER RAIL SPACERS simplified abstract
- International business machines corporation (20240105590). STACKED FET CONTACT FORMATION simplified abstract
- International business machines corporation (20240105605). SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK simplified abstract
- International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract
- International business machines corporation (20240105607). BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK simplified abstract
- International business machines corporation (20240105608). LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY simplified abstract
- International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract
- International business machines corporation (20240105610). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT simplified abstract
- International business machines corporation (20240105611). BACKSIDE SIGNAL INTEGRATION THROUGH VIA TO SIGNAL LINE CONNECTION simplified abstract
- International business machines corporation (20240105612). BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS simplified abstract
- International business machines corporation (20240105613). DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC simplified abstract
- International business machines corporation (20240105614). TRANSISTORS WITH ENHANCED VIA-TO-BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240105768). EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER simplified abstract
- International business machines corporation (20240105788). LOCAL INTERCONNECT AT BACKSIDE TO ENABLE FLEXIBLE ROUTING ACROSS DIFFERENT CELL simplified abstract
- International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract
- International business machines corporation (20240112984). METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract
- International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113013). SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract
- International business machines corporation (20240113021). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract
- International business machines corporation (20240113023). Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International business machines corporation (20240113125). POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract
- International business machines corporation (20240113162). MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract
- International business machines corporation (20240113176). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract
- International business machines corporation (20240113193). BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract
- International business machines corporation (20240113200). INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract
- International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract
- International business machines corporation (20240113219). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract
- International business machines corporation (20240113232). EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE simplified abstract
- International business machines corporation (20240114699). BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract
- International business machines corporation (20240120256). Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract
- International business machines corporation (20240120271). SKIP VIA WITH LATERAL LINE CONNECTION simplified abstract
- International business machines corporation (20240120369). HIGH DENSITY TRENCH CAPACITOR simplified abstract
- International business machines corporation (20240120372). SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract
- International business machines corporation (20240121933). STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract
- International business machines corporation (20240121966). MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract
- International business machines corporation (20240128318). SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128331). BOTTOM ENHANCED LINER-LESS VIA CONTACT FOR REDUCED MOL RESISTANCE simplified abstract
- International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract
- International business machines corporation (20240128334). SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128345). REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract
- International business machines corporation (20240130142). RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS simplified abstract
- International business machines corporation (20240130256). PHASE CHANGE MEMORY CELL WITH HEATER simplified abstract
- International business machines corporation (20240136253). ISOLATION RAIL BETWEEN BACKSIDE POWER RAILS simplified abstract
- International business machines corporation (20240136287). Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract
- International business machines corporation (20240136288). Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device simplified abstract
- International business machines corporation (20240136289). VIRTUAL POWER SUPPLY THROUGH WAFER BACKSIDE simplified abstract
- International business machines corporation (20240136414). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract
P
- Patent Applications Report for 10th Mar 2023
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- Patent Applications Report for 15th Dec 2023
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- Patent Applications Report for 16th Jun 2023
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- Patent Applications Report for 1st Mar 2024