International business machines corporation (20240136414). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract

SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Brent A. Anderson of Jericho VT (US)

REINALDO Vega of Mahopac NY (US)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240136414 titled 'SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY

Simplified Explanation

The semiconductor structure described in the abstract includes a semiconductor wafer with two transistors, each with their own source/drain contacts, separated by a cut region containing different dielectric materials. The method of manufacturing this structure is also provided.

• The semiconductor structure includes:
  • - A semiconductor wafer with a first and second transistor
  • - First source/drain contact of the first transistor
  • - Second source/drain contact of the second transistor
  • - Cut region between the two contacts with different dielectric materials
  • - Liner of first dielectric material lining part of the contacts
  • - Filler of second dielectric material adjacent to the liner

• • Potential Applications:

The technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

• • Problems Solved:

This technology helps in reducing parasitic capacitance and improving the performance of transistors in semiconductor devices.

• • Benefits:

The use of different dielectric materials in the cut region helps in enhancing the isolation between the transistors, leading to better overall device performance.

• • Potential Commercial Applications:

This technology can be utilized in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.

• • Possible Prior Art:

One possible prior art could be the use of similar dielectric materials in the cut regions of semiconductor structures to improve device performance.

1. 1. 1. Unanswered Questions:
         1. How does the choice of dielectric materials impact the overall performance of the semiconductor structure?

The abstract does not provide specific details on how the selection of dielectric materials affects the functionality and efficiency of the semiconductor structure.

1. 1. 1. 1. What are the specific manufacturing processes involved in creating the cut region with different dielectric materials?

The abstract mentions a method of manufacturing the semiconductor structure but does not elaborate on the specific steps or techniques used in creating the cut region with different dielectric materials.

Original Abstract Submitted

embodiments of present invention provide a semiconductor structure. the semiconductor structure includes a semiconductor wafer having a first transistor and a second transistor; a first source/drain (s/d) contact of the first transistor; a second s/d contact of the second transistor; and a cut region between the first s/d contact and the second s/d contact, wherein the cut region includes a liner of a first dielectric material and a filler of a second dielectric material that is different from the first dielectric material, the liner lining at least a part of the first s/d contact and a part of the second s/d contact, and the filler being directly adjacent to the liner and between the first s/d contact and the second s/d contact. a method of manufacturing the semiconductor structure is also provided.