17943602. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Prabudhya Roy Chowdhury of Albany NY (US)

Nikhil Jain of Apple Valley MN (US)

Kisik Choi of Watervliet NY (US)

Ruilong Xie of Niskayuna NY (US)

BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17943602 titled 'BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT

Simplified Explanation

The semiconductor device described in the abstract features a full wrap-around contact surrounding a partial length of the source/drain, with a partial front-side wrap-around contact from the front side of the substrate and a partial back-side wrap-around contact from the back side of the substrate.

  • Source/drain with height, length, and width
  • Full wrap-around contact surrounding partial length of source/drain
  • Partial front-side wrap-around contact from front side of substrate
  • Partial back-side wrap-around contact from back side of substrate

Potential Applications

The technology could be applied in:

  • Semiconductor manufacturing
  • Integrated circuits
  • Electronics industry

Problems Solved

This innovation addresses issues such as:

  • Improving contact efficiency
  • Enhancing device performance
  • Increasing reliability of semiconductor devices

Benefits

The benefits of this technology include:

  • Better electrical contact
  • Improved overall device functionality
  • Enhanced device longevity

Potential Commercial Applications

Optimizing semiconductor devices with full wrap-around contacts for:

  • Consumer electronics
  • Telecommunications industry
  • Automotive sector


Original Abstract Submitted

A semiconductor device includes a source/drain having a height, a length, and a width. A full wrap-around contact surrounds a partial length of the source/drain, wherein the full wrap-around contact includes a partial front-side wrap-around contact from a front side of a substrate and a partial back-side wrap-around contact from a back side of the substrate.

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