International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract

HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE

Organization Name

international business machines corporation

Inventor(s)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Kangguo Cheng of Schenectady NY (US)

Andrew M. Greene of Slingerlands NY (US)

Sung Dae Suk of Watervliet NY (US)

HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113213 titled 'HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a channel region of stacked semiconductor layers arranged in clusters, with a pair of semiconductor sheets and a dielectric material between them. A gate structure encapsulates the channel region, and source and drain regions are present on opposing sides of the channel region.

• The semiconductor device includes a unique design with stacked semiconductor layers arranged in clusters, enhancing performance and efficiency.
• The presence of a dielectric material between the semiconductor sheets helps in controlling the flow of current through the device.
• The gate structure encapsulating the channel region provides stability and protection to the semiconductor layers.
• The source and drain regions on opposing sides of the channel region facilitate the flow of current through the device.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced electronic devices
• High-performance computing systems
• Power management applications

Problems Solved

This technology helps in:

• Improving the efficiency of semiconductor devices
• Enhancing the performance of electronic systems
• Controlling the flow of current in a more precise manner

Benefits

The benefits of this technology include:

• Increased efficiency and performance
• Better control over current flow
• Enhanced stability and reliability of electronic devices

Potential Commercial Applications

The technology could find commercial applications in:

• Semiconductor manufacturing industry
• Electronics and consumer electronics sector
• Research and development for advanced technologies

Possible Prior Art

One possible prior art could be the use of stacked semiconductor layers in electronic devices, but the specific arrangement in clusters with a dielectric material between the sheets may be a novel aspect of this technology.

How does this technology compare to traditional semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and traditional semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to address this question.

What are the potential challenges in implementing this technology on a larger scale for commercial applications?

The article does not discuss the potential challenges in implementing this technology on a larger scale for commercial applications. Factors such as cost, scalability, and compatibility with existing systems could be important considerations.

Original Abstract Submitted

a semiconductor device including a channel region of stacked semiconductor layers arranged in at least one cluster, wherein each cluster includes a pair of the semiconductor sheets with a dielectric material present therebetween. the semiconductor device further includes a gate structure encapsulating the channel region of stacked semiconductor sheets arranged in clusters. source and drain regions are present on opposing sides of the channel region.