17808568. CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Kisik Choi of Watervliet NY (US)

Su Chen Fan of Cohoes NY (US)

Albert M. Young of Fishkill NY (US)

CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17808568 titled 'CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR

Simplified Explanation

Abstract: A semiconductor device is described in this patent application. The device consists of a first field effect transistor (FET) and a second FET stacked on top of the first one. It also includes a backside contact (BSCA) that is connected to a backside power rail (BSPR). Additionally, there is a via to backside power rail (VBPR) that lands over the BSCA.

Patent/Innovation Explanation:

  • The semiconductor device includes two stacked field effect transistors (FETs).
  • A backside contact (BSCA) is connected to a backside power rail (BSPR).
  • A via to backside power rail (VBPR) is present, landing over the BSCA.

Potential Applications:

  • This semiconductor device can be used in various electronic devices such as smartphones, computers, and other consumer electronics.
  • It can be utilized in power management circuits, amplifiers, and other integrated circuits.

Problems Solved:

  • The stacked FETs provide improved performance and functionality in electronic devices.
  • The backside contact and power rail connection enhance power distribution and efficiency.
  • The via to backside power rail allows for efficient power delivery to the device.

Benefits:

  • The stacked FETs offer increased circuit density and performance.
  • The backside contact and power rail connection improve power distribution and reduce power losses.
  • The via to backside power rail enables efficient power delivery, enhancing overall device efficiency.


Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes a first field effect transistor (FET); a second FET stacked over the bottom FET; a backside contact (BSCA) connected to a backside power rail (BSPR); and a via to backside power rail (VBPR), the VBPR landing over the BSCA.

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