International business machines corporation (20240120372). SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION
Organization Name
international business machines corporation
Inventor(s)
Koichi Motoyama of Clifton Park NY (US)
Ruilong Xie of Niskayuna NY (US)
Kisik Choi of Watervliet NY (US)
Chih-Chao Yang of Glenmont NY (US)
SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120372 titled 'SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION
Simplified Explanation
The semiconductor structure described in the abstract includes a shallow trench isolation region within a semiconductor substrate, along with a conductive spacer within the shallow trench isolation region.
- The semiconductor structure features a shallow trench isolation region to isolate different components on the semiconductor substrate.
- A conductive spacer is placed within the shallow trench isolation region to enhance the electrical conductivity of the structure.
Potential Applications
This technology could be applied in the manufacturing of integrated circuits, microprocessors, and other semiconductor devices where isolation and electrical conductivity are crucial.
Problems Solved
1. Improved isolation between components on a semiconductor substrate. 2. Enhanced electrical conductivity within the semiconductor structure.
Benefits
1. Increased efficiency and performance of semiconductor devices. 2. Better reliability and longevity of integrated circuits.
Potential Commercial Applications
Optimizing semiconductor manufacturing processes for improved performance and reliability in various electronic devices.
Possible Prior Art
One possible prior art could be the use of different isolation techniques in semiconductor structures, such as oxide isolation or trench isolation methods.
Unanswered Questions
How does the conductive spacer enhance electrical conductivity within the semiconductor structure?
The abstract does not provide specific details on the mechanism by which the conductive spacer improves electrical conductivity.
What are the specific dimensions and materials used in the semiconductor structure described?
More information on the exact specifications of the shallow trench isolation region and conductive spacer would be helpful in understanding the practical implementation of this technology.
Original Abstract Submitted
a semiconductor structure includes a shallow trench isolation region disposed within a semiconductor substrate, and a conductive spacer disposed within the shallow trench isolation region.
