17545635. STACKED CROSS-POINT PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
STACKED CROSS-POINT PHASE CHANGE MEMORY
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Carl Radens of LaGrangeville NY (US)
Ruilong Xie of Niskayuna NY (US)
STACKED CROSS-POINT PHASE CHANGE MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17545635 titled 'STACKED CROSS-POINT PHASE CHANGE MEMORY
Simplified Explanation
The abstract describes a stacked phase change memory structure with a cross-point architecture. It consists of multiple phase change material element-containing structures stacked on top of each other. Each structure includes a bottom electrode, a phase change material element, and a top electrode.
- The patent describes a stacked phase change memory structure with a cross-point architecture.
- The structure includes multiple phase change material element-containing structures stacked on top of each other.
- Each structure consists of a bottom electrode, a phase change material element, and a top electrode.
Potential applications of this technology:
- Memory devices: The stacked phase change memory structure can be used in various memory devices, such as non-volatile memory or random-access memory.
- Data storage: The structure can be utilized for high-density data storage applications, providing fast and reliable data access.
- Computing systems: The technology can be integrated into computing systems to enhance memory performance and efficiency.
Problems solved by this technology:
- Limited memory capacity: The stacked structure allows for increased memory capacity by stacking multiple phase change material element-containing structures.
- Cross-point architecture: The cross-point architecture enables efficient data access and reduces the complexity of memory design.
- Phase change material element: The use of phase change material elements provides fast switching speeds and low power consumption.
Benefits of this technology:
- Increased memory capacity: The stacked structure allows for higher memory density, enabling storage of larger amounts of data.
- Improved performance: The cross-point architecture and phase change material elements contribute to faster data access and reduced power consumption.
- Simplified design: The use of a cross-point architecture simplifies the memory design process and reduces manufacturing complexity.
Original Abstract Submitted
A stacked phase change memory structure having a cross-point architecture is provided. The stacked phase change memory structure includes at least two phase change material element-containing structures stacked one atop the other. Each phase change material element-containing structure of the plurality of phase change material element-containing structures has a cross-point architecture and includes, from bottom to top, at least one bottom electrode, a phase change material element, and a top electrode.
