17487301. LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)

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LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Andrew M. Greene of Slingerlands NY (US)

Julien Frougier of Albany NY (US)

Veeraraghavan S. Basker of Schenectady NY (US)

LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17487301 titled 'LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES

Simplified Explanation

The abstract describes a system that includes a semiconductor structure with a dielectric liner and an access trench. The dielectric liner wraps around a substrate island and separates it from a gate stack, while the access trench is in physical contact with the dielectric liner.

  • The system includes a semiconductor structure with a dielectric liner and an access trench.
  • The dielectric liner wraps around a substrate island, separating it from a gate stack.
  • The access trench is in physical contact with the dielectric liner.

Potential Applications

  • Semiconductor manufacturing
  • Integrated circuit design
  • Electronics industry

Problems Solved

  • Provides a protective barrier between the substrate island and the gate stack
  • Helps prevent electrical interference and damage to the substrate island

Benefits

  • Enhanced performance and reliability of the semiconductor structure
  • Improved isolation and insulation of the substrate island
  • Potential for increased efficiency and functionality of integrated circuits


Original Abstract Submitted

Embodiments are disclosed for a system. The system includes a semiconductor structure. The semiconductor structure includes a dielectric liner that wraps around a top and one side of a substrate island. The dielectric liner separates a substrate from a gate stack. Further, the system includes an access trench in physical contact with the dielectric liner.

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