17643202. LINER-LESS VIA CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
LINER-LESS VIA CONTACT
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Nicolas Loubet of GUILDERLAND NY (US)
Kangguo Cheng of Schenectady NY (US)
CHANRO Park of CLIFTON PARK NY (US)
LINER-LESS VIA CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17643202 titled 'LINER-LESS VIA CONTACT
Simplified Explanation
The abstract describes an interconnect structure and a method of forming it for a semiconductor device. The structure includes a source drain contact and a via that contacts the source drain contact and an interlayer dielectric.
- The interconnect structure is designed for a semiconductor device.
- It includes a source drain contact that connects to a source drain region of the device.
- The structure also includes a via that connects to the source drain contact.
- The via has a lower portion that contacts the interlayer dielectric.
- The interconnect structure is formed using a specific method.
Potential Applications
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
- Provides a reliable interconnect structure for a semiconductor device
- Ensures proper contact between the source drain region and the interlayer dielectric
Benefits
- Improved performance and functionality of semiconductor devices
- Enhanced reliability and durability of interconnect structures
- Enables efficient and effective integration of different components in a semiconductor device.
Original Abstract Submitted
An interconnect structure and a method of forming the interconnect structure are provided. The interconnect structure includes a source drain contact above and contacting a source drain region of a semiconductor device. The interconnect structure also includes a via above and contacting the source drain contact. The via includes a lower portion with an uppermost surface that contacts a lowermost surface of an interlayer dielectric.
