17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Min Gyu Sung of Latham NY (US)
Heng Wu of Santa Clara CA (US)
CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17941248 titled 'CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES
Simplified Explanation
The semiconductor structure described in the patent application includes a first source/drain contact positioned between a first gate structure and a second gate structure, a dielectric cap on the first source/drain contact, and a first gate contact on top of the dielectric cap. The first gate contact serves to connect the first gate structure with the second gate structure.
- The semiconductor structure features a unique arrangement of source/drain contacts and gate structures.
- A dielectric cap is utilized to enhance the performance of the semiconductor structure.
- The first gate contact plays a crucial role in connecting the gate structures.
Potential Applications
The technology described in the patent application could be applied in:
- Advanced semiconductor devices
- Integrated circuits
- High-speed electronic components
Problems Solved
This technology addresses issues such as:
- Improving the performance of semiconductor structures
- Enhancing connectivity between gate structures
- Increasing efficiency in electronic devices
Benefits
The benefits of this technology include:
- Enhanced performance and efficiency in semiconductor devices
- Improved connectivity between gate structures
- Potential for faster electronic components
Potential Commercial Applications
Optimizing Semiconductor Structures for Enhanced Performance
Original Abstract Submitted
A semiconductor structure includes a first source/drain contact disposed between a first gate structure and a second gate structure, a dielectric cap disposed on the first source/drain contact, and a first gate contact disposed over the dielectric cap. The first gate contact connects the first gate structure with the second gate structure.
