17932347. VERTICAL NAND WITH BACKSIDE STACKING simplified abstract (International Business Machines Corporation)
Contents
- 1 VERTICAL NAND WITH BACKSIDE STACKING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL NAND WITH BACKSIDE STACKING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL NAND WITH BACKSIDE STACKING
Organization Name
International Business Machines Corporation
Inventor(s)
Min Gyu Sung of Latham NY (US)
Soon-Cheon Seo of Glenmont NY (US)
Chen Zhang of Guilderland NY (US)
Ruilong Xie of Niskayuna NY (US)
Heng Wu of Santa Clara CA (US)
Julien Frougier of Albany NY (US)
VERTICAL NAND WITH BACKSIDE STACKING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17932347 titled 'VERTICAL NAND WITH BACKSIDE STACKING
Simplified Explanation
The present invention provides semiconductor structures. The semiconductor structures may include a peripheral complimentary metal-oxide semiconductor (CMOS) substrate, a first vertical NAND cell on a first side of the CMOS substrate, and a second vertical NAND cell on a second side of the CMOS substrate opposite the first side.
- Peripheral complimentary metal-oxide semiconductor (CMOS) substrate
- First vertical NAND cell on one side of the CMOS substrate
- Second vertical NAND cell on the opposite side of the CMOS substrate
Potential Applications
The semiconductor structures could be used in:
- Memory devices
- Solid-state drives
- Mobile devices
Problems Solved
The semiconductor structures help in:
- Increasing memory storage capacity
- Improving data transfer speeds
- Enhancing overall device performance
Benefits
The benefits of the semiconductor structures include:
- Higher data storage density
- Faster read and write speeds
- Enhanced reliability and durability
Potential Commercial Applications
The technology could be applied in various industries such as:
- Electronics
- Data storage
- Telecommunications
Possible Prior Art
One possible prior art could be the development of traditional NAND flash memory structures with horizontal cell layouts.
What are the potential limitations of this technology in real-world applications?
The potential limitations of this technology in real-world applications could include:
- Cost of implementation
- Compatibility with existing systems
How does this innovation compare to similar technologies on the market?
This innovation offers:
- Higher memory storage capacity
- Improved data transfer speeds
- Enhanced reliability and durability
Original Abstract Submitted
The present invention provides semiconductor structures. The semiconductor structures may include a peripheral complimentary metal-oxide semiconductor (CMOS) substrate, a first vertical NAND cell on a first side of the CMOS substrate, and a second vertical NAND cell on a second side of the CMOS substrate opposite the first side.
