International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract

HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR

Organization Name

international business machines corporation

Inventor(s)

Heng Wu of Santa Clara CA (US)

Chen Zhang of Guilderland NY (US)

Min Gyu Sung of Latham NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105609 titled 'HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR

Simplified Explanation

The semiconductor device described in the abstract includes a first device located on the frontside of a semiconductor substrate, an inductor integrated with a first backside metal (BSM) stack on the backside of the substrate, and a first electrical contact connecting the frontside and backside of the substrate.

• The semiconductor device includes a first device on the frontside of the substrate.
• An inductor is located on the backside of the substrate and integrated with a first BSM stack.
• A first electrical contact is situated between the frontside and backside of the substrate.
• One end of the first electrical contact is connected to the first BSM stack, while the other end is connected to a first source/drain region of the first device.

Potential Applications

The technology described in this patent application could be applied in:

• Power management systems
• Radio frequency (RF) circuits
• Wireless communication devices

Problems Solved

This technology helps address the following issues:

• Efficient power distribution
• Enhanced signal processing capabilities
• Improved integration of components on a semiconductor substrate

Benefits

The semiconductor device offers the following benefits:

• Higher performance in power management applications
• Increased efficiency in RF circuits
• Enhanced functionality in wireless communication devices

Potential Commercial Applications

The technology has potential commercial applications in:

• Mobile devices
• Internet of Things (IoT) devices
• Automotive electronics

Possible Prior Art

One possible prior art for this technology could be the integration of inductors on semiconductor substrates for improved circuit performance.

How does this technology compare to existing inductor integration methods?

This article does not provide a direct comparison with other methods of integrating inductors on semiconductor substrates. Further research and analysis would be needed to determine the advantages and disadvantages of this approach compared to existing techniques.

What are the specific design considerations for implementing this technology in different types of semiconductor devices?

The article does not delve into the specific design considerations for implementing this technology in various semiconductor devices. Understanding the specific requirements and constraints for different applications would be crucial for successful implementation.

Original Abstract Submitted

a semiconductor device a first device located on a frontside of a semiconductor substrate. the semiconductor device further includes an inductor located on a backside of the semiconductor substrate and integrated with a first backside metal (bsm) stack. the semiconductor device further includes a first electrical contact located between the frontside and the backside of the semiconductor substrate. a first end of the first electrical contact is connected to the first bsm stack and a second end of the first electrical contact is connected to a first source/drain region of the first device.