International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract

DIRECT BACKSIDE SELF-ALIGNED CONTACT

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Chen Zhang of Guilderland NY (US)

Min Gyu Sung of Latham NY (US)

Heng Wu of Santa Clara CA (US)

DIRECT BACKSIDE SELF-ALIGNED CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128333 titled 'DIRECT BACKSIDE SELF-ALIGNED CONTACT

Simplified Explanation

A semiconductor structure is provided with a backside source/drain contact structure that contacts a source/drain region of a transistor and overlaps a portion of a tri-layered bottom dielectric isolation structure located on the backside of the transistor. The tri-layered bottom dielectric isolation structure prevents shorting between the gate structure of the transistor and the backside source/drain contact structure, improving process margin.

• The semiconductor structure includes a backside source/drain contact structure that contacts a source/drain region of a transistor.
• The structure overlaps a portion of a tri-layered bottom dielectric isolation structure located on the backside of the transistor.
• The tri-layered bottom dielectric isolation structure prevents shorting between the gate structure of the transistor and the backside source/drain contact structure, improving process margin.

Potential Applications

This technology can be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved

This technology solves the issue of shorting between the gate structure of a transistor and the backside source/drain contact structure, which can improve the overall performance and reliability of semiconductor devices.

Benefits

The presence of the tri-layered bottom dielectric isolation structure enhances process margin and prevents potential shorting issues, leading to more reliable and efficient semiconductor devices.

Potential Commercial Applications

This technology has potential applications in the semiconductor industry for the production of high-performance electronic devices, including smartphones, computers, and other consumer electronics.

Possible Prior Art

Prior art may include similar semiconductor structures with backside source/drain contact structures, but the specific implementation of a tri-layered bottom dielectric isolation structure to prevent shorting may be a novel aspect of this technology.

How does this technology compare to other methods of preventing shorting in semiconductor devices?

This article does not provide a direct comparison to other methods of preventing shorting in semiconductor devices.

What are the specific materials used in the tri-layered bottom dielectric isolation structure?

The article does not specify the exact materials used in the tri-layered bottom dielectric isolation structure.

Original Abstract Submitted

a semiconductor structure is provided including a backside source/drain contact structure that contacts a source/drain region of a transistor and overlaps a portion of a tri-layered bottom dielectric isolation structure that is located on a backside of the transistor. the presence of the tri-layered bottom dielectric isolation structure prevents shorting between the gate structure of the transistor and the backside source/drain contact structure, and thus improves process margin.