17933861. SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract (International Business Machines Corporation)
Contents
- 1 SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW
Organization Name
International Business Machines Corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Kisik Choi of Watervliet NY (US)
Brent A. Anderson of Jericho VT (US)
SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW - A simplified explanation of the abstract
This abstract first appeared for US patent application 17933861 titled 'SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW
Simplified Explanation
The semiconductor device described in the abstract includes multiple layers and components for improved performance and functionality.
- The device features first and second source/drain (S/D) epitaxy layers, a gate contact, and a back end of the line (BEOL) layer connected to the first S/D epitaxy and gate contact on the top side of the device.
- Additionally, there is a wafer carrying the BEOL layer on the top side, a backside trench epitaxy formed through and contacting portions of the second S/D epitaxy, and a backside power distribution network electrically coupled to the backside trench epitaxy on the bottom of the device.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronics
- Power distribution systems
Problems Solved
This innovation addresses challenges related to:
- Enhancing device performance
- Improving power distribution efficiency
- Increasing integration capabilities
Benefits
The benefits of this technology include:
- Enhanced device functionality
- Improved power management
- Increased overall performance
Potential Commercial Applications
This technology could be valuable in industries such as:
- Semiconductor manufacturing
- Electronics production
- Power distribution systems
Possible Prior Art
One potential prior art for this technology could be the use of multiple epitaxy layers in semiconductor devices for improved performance and functionality.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of power efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor devices in terms of power efficiency. Further research or testing may be needed to determine the specific advantages in this aspect.
What are the potential limitations or drawbacks of implementing this technology in practical applications?
The article does not address any potential limitations or drawbacks of implementing this technology in practical applications. Additional studies or real-world testing may be necessary to identify any challenges that could arise.
Original Abstract Submitted
A semiconductor device includes first source/drain (S/D) epitaxy and a second S/D epitaxy and a gate contact. The device also includes a back end of the line (BEOL) layer connected electrically connected to the first S/D epitaxy and the gate contact on a top side of the device and a wafer that carries the BEOL layer and is on the top side of the device. The device also includes a backside trench epitaxy formed through and contacting portions of the second S/D epitaxy and a backside power distribution network electrically coupled to the backside trench epitaxy and disposed on the bottom of the device.
