17457667. HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Veeraraghavan S. Basker of Schenectady NY (US)

Andrew Gaul of Halfmoon NY (US)

HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17457667 titled 'HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY

Simplified Explanation

The abstract describes a new approach for creating a metal-insulator-metal capacitor with a comb-like structure. The capacitor includes a first electrode material with a central, vertical portion and two sets of stacked horizontal portions. An insulator material surrounds the first electrode and exposes the top surface of the central portion. A second electrode material surrounds the insulator. The capacitor also includes first and second electrode contacts.

  • The patent describes a new design for a metal-insulator-metal capacitor.
  • The capacitor has a comb-like structure with a central, vertical portion and stacked horizontal portions.
  • An insulator material surrounds the first electrode and exposes the top surface of the central portion.
  • A second electrode material surrounds the insulator.
  • The capacitor includes first and second electrode contacts.

Potential Applications

  • Electronics manufacturing
  • Integrated circuits
  • Energy storage devices

Problems Solved

  • Provides a new design for metal-insulator-metal capacitors
  • Offers a more efficient and compact structure for capacitors

Benefits

  • Improved performance and efficiency of capacitors
  • Compact design allows for space-saving in electronic devices
  • Potential for increased energy storage capacity


Original Abstract Submitted

An approach provides a metal-insulator-metal capacitor with a comb-like structure. The metal-insulator-metal capacitor includes a first electrode material forming a central, vertical portion of the first electrode metal and two sets of stacked horizontal portions of the first electrode metal. An insulator material surrounds the first electrode metal and exposes a top surface of the central, vertical portion of the first electrode metal. The metal-insulator-metal capacitor includes a second electrode material surrounding the insulator material. The metal-insulator-metal capacitor includes a first electrode contact connecting to the top surface of the central, vertical portion of the first electrode metal and a second electrode contact connecting to a top surface of the second electrode material.