International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
Contents
VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET)
Organization Name
international business machines corporation
Inventor(s)
Min Gyu Sung of Latham NY (US)
Julien Frougier of Albany NY (US)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
Chanro Park of Clifton Park NY (US)
VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113117 titled 'VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET)
Simplified Explanation
The abstract describes a patent application for stacked field effect transistors (SFETs) with integrated vertical inverters. Here are some key points to explain the innovation:
- Stacked field effect transistors (SFETs) have integrated vertical inverters.
- A first nanosheet is stacked vertically over a second nanosheet.
- A common gate is formed around the channel region of the first and second nanosheets.
- Top source or drain region is in direct contact with the first nanosheet, and bottom source or drain region is in direct contact with the second nanosheet.
- Portions of the top and bottom source or drain regions are shorted to define a common source or drain region.
- The top and bottom source or drain regions are electrically coupled in series through the first and second nanosheets.
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- Potential Applications
The technology can be applied in advanced electronic devices, such as high-performance processors, memory storage units, and communication systems.
- Problems Solved
This innovation addresses the need for more efficient and compact transistor designs, enabling higher performance and integration in electronic devices.
- Benefits
The integrated vertical inverters in SFETs offer improved functionality, reduced power consumption, and increased speed in electronic circuits.
- Potential Commercial Applications
The technology can be utilized in the semiconductor industry for developing next-generation electronic devices with enhanced performance and energy efficiency.
- Possible Prior Art
One possible prior art could be the use of traditional field-effect transistors in electronic circuits, which may not offer the same level of integration and efficiency as the stacked SFETs with integrated vertical inverters.
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- Unanswered Questions
- How does the integration of vertical inverters impact the overall performance of the SFETs?
The abstract mentions the integration of vertical inverters, but it does not delve into the specific effects on the performance metrics of the SFETs. Further research or experimentation may be needed to understand the implications fully.
- Are there any limitations or challenges associated with implementing this technology in practical electronic devices?
While the abstract highlights the innovative design of the stacked SFETs with integrated vertical inverters, it does not discuss any potential limitations or challenges that may arise during the implementation process. Further exploration is required to assess the feasibility and scalability of this technology in real-world applications.
Original Abstract Submitted
embodiments of the present invention are directed to stacked field effect transistors (sfets) having integrated vertical inverters. in a non-limiting embodiment, a first nanosheet is vertically stacked over a second nanosheet. a common gate is formed around a channel region of the first and second nanosheets. a top source or drain region is formed in direct contact with the first nanosheet and a bottom source or drain region is formed in direct contact with the second nanosheet. a first portion of the top source or drain region is shorted to a first portion of the bottom source or drain region to define a common source or drain region. a second portion of the top source or drain region is electrically coupled to a second portion of the bottom source or drain region in series through the first nanosheet, the common source or drain region, and the second nanosheet.
