17528391. VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES simplified abstract (International Business Machines Corporation)
VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES
Organization Name
International Business Machines Corporation
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Julien Frougier of Albany NY (US)
Ruilong Xie of Niskayuna NY (US)
VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17528391 titled 'VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a patent application for a semiconductor FET (field effect transistor) that includes nanosheet channels and a common metal contact for the source/drain regions. The first source/drain region is made of p-type material, while the second source/drain region is made of n-type material.
- The semiconductor FET has multiple nanosheet channels between the source/drain regions.
- A common metal contact is used for both the first and second source/drain regions.
- The first source/drain region is made of p-type material.
- The second source/drain region is made of n-type material.
Potential Applications
- Integrated circuits
- Electronics manufacturing
- Semiconductor devices
Problems Solved
- Improved performance and efficiency of field effect transistors
- Enhanced conductivity and control of current flow
- Simplified manufacturing process
Benefits
- Higher performance and efficiency in semiconductor devices
- Improved conductivity and control of current flow
- Simplified manufacturing process for integrated circuits
Original Abstract Submitted
A semiconductor FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region and a common metal contact for the first source/drain region and the second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material.
