17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)

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PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Heng Wu of Guilderland NY (US)

Alexander Reznicek of Troy NY (US)

Oleg Gluschenkov of Tannersville NY (US)

PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17455935 titled 'PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES

Simplified Explanation

The abstract describes a semiconductor device that includes two channel regions on a substrate, with a metal gate extending across both channels. The metal gate has an air gap located between the two channel regions, and it is positioned on top of the air gap.

  • The semiconductor device has a first and second channel region on a substrate.
  • A metal gate extends across both channel regions.
  • An air gap is present in the metal gate, located between the first and second channel regions.
  • The metal gate is positioned on top of the air gap.

Potential Applications:

  • This semiconductor device could be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can be applied in the manufacturing of integrated circuits and microprocessors.

Problems Solved:

  • The presence of the air gap in the metal gate helps to improve the performance and efficiency of the semiconductor device.
  • It helps to reduce the leakage current and power consumption of the device.

Benefits:

  • The air gap in the metal gate allows for better control of the electrical properties of the semiconductor device.
  • It helps to enhance the speed and performance of the device.
  • The reduction in leakage current and power consumption leads to improved energy efficiency.


Original Abstract Submitted

A semiconductor device comprising a first channel region located on a substrate and a second channel region located on the substrate. A metal gate that extends across the first channel to the second channel and an air gap located in the metal gate, wherein the air gap is located between the first channel region and the second channel region, wherein the metal gate is located on top of the air gap.

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