17956918. BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract (International Business Machines Corporation)
Contents
- 1 BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL
Organization Name
International Business Machines Corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Shogo Mochizuki of Mechanicville NY (US)
Kisik Choi of Watervliet NY (US)
Ruilong Xie of Niskayuna NY (US)
BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17956918 titled 'BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL
Simplified Explanation
The semiconductor structure described in the patent application includes a first source-drain region, a second source-drain region, at least one channel region connecting the first and second source-drain regions, and a gate adjacent to the channel region. Additionally, there is a bottom dielectric isolation region located inward of the gate, first and second bottom silicon regions inward of the first and second source-drain regions, and a back side contact that extends through the second bottom silicon region into the second source-drain region.
- First source-drain region
- Second source-drain region
- Channel region connecting the source-drain regions
- Gate adjacent to the channel region
- Bottom dielectric isolation region
- First and second bottom silicon regions
- Back side contact extending through the second bottom silicon region
Potential Applications
This semiconductor structure could be used in various electronic devices such as smartphones, tablets, laptops, and other portable devices.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by providing better isolation and contact structures.
Benefits
- Enhanced performance of electronic devices - Improved efficiency of semiconductor structures - Better isolation and contact structures
Potential Commercial Applications
Optimizing Semiconductor Structures for Enhanced Performance
Possible Prior Art
Prior art related to semiconductor structures with improved isolation and contact structures may exist, but specific examples are not provided in the patent application.
Unanswered Questions
How does this semiconductor structure compare to existing technologies in terms of performance and efficiency?
The patent application does not provide a direct comparison with existing technologies, so it is unclear how this innovation stacks up against current solutions.
What are the specific electronic devices that could benefit the most from this semiconductor structure?
While the potential applications mention various electronic devices, it would be helpful to have more specific information on which devices would see the most significant improvements from this technology.
Original Abstract Submitted
A semiconductor structure includes a first source-drain region; a second source-drain region; at least one channel region coupling the first and second source-drain regions; and a gate adjacent the at least one channel region. A bottom dielectric isolation region is located inward of the gate. First and second bottom silicon regions are respectively located inward of the first and second source-drain regions. A back side contact projects through the second bottom silicon region into the second source-drain region.
