17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Chen Zhang of Guilderland NY (US)

Heng Wu of Guilderland NY (US)

Julien Frougier of Albany NY (US)

Alexander Reznicek of Troy NY (US)

NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 17548913 titled 'NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN

Simplified Explanation

The abstract of the patent application describes a new design for a field-effect transistor (FET) channel using silicon nanosheets and a vertical blocker fin. Here is a simplified explanation of the abstract:

• The FET channel is made up of a stack of silicon nanosheets.
• These nanosheets are arranged parallel to a flat part of the FET structure.
• The FET channel also includes a vertical blocker fin.
• The vertical blocker fin is connected to at least one of the nanosheets in the stack.

Potential Applications:

• This technology could be used in the development of more efficient and compact electronic devices.
• It may find applications in various fields such as computing, telecommunications, and consumer electronics.

Problems Solved:

• The use of silicon nanosheets and a vertical blocker fin in the FET channel helps to improve the performance and efficiency of the transistor.
• This design addresses the limitations of traditional FET channels and offers a new approach to transistor design.

Benefits:

• The use of silicon nanosheets allows for better control of the electrical current in the FET channel.
• The addition of a vertical blocker fin helps to enhance the transistor's performance by reducing leakage current and improving transistor switching characteristics.
• This technology offers the potential for smaller and more energy-efficient electronic devices.

Original Abstract Submitted

A FET channel comprises a stack of silicon nanosheets. The silicon nanosheets are oriented parallel to a planar portion of the FET in which the FET channel is formed. The FET channel also comprises a vertical blocker fin. The vertical blocker fin is attached to at least one nanosheet in the stack of nanosheets.