17938667. MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract (International Business Machines Corporation)

MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS

Organization Name

International Business Machines Corporation

Inventor(s)

Julien Frougier of Albany NY (US)

Kangguo Cheng of Schenectady NY (US)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Min Gyu Sung of Latham NY (US)

MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17938667 titled 'MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS

Simplified Explanation

The memory device described in the patent application consists of vertically stacked ferroelectric capacitors on a substrate, with different capacitive outputs when a constant voltage is applied. The capacitors have different thicknesses, allowing for different electric field outputs and producing a combination of different output signals based on various threshold voltage levels.

• Vertically stacked ferroelectric capacitors on a substrate
• Different capacitive outputs for each capacitor when a constant voltage is applied
• First and second electrodes in electrical contact with the capacitors
• Different thicknesses of capacitor plates for varying electric field outputs
• Production of different output signals based on different threshold voltage levels

Potential Applications

This technology could be applied in memory devices, sensors, and other electronic devices requiring precise control over electric field outputs.

Problems Solved

This innovation addresses the need for memory devices with different output signals based on varying threshold voltage levels, allowing for more flexibility and customization in electronic applications.

Benefits

The benefits of this technology include improved performance and efficiency in memory devices, as well as the ability to tailor electric field outputs to specific requirements in various electronic applications.

Potential Commercial Applications

The potential commercial applications of this technology could include memory devices for consumer electronics, industrial sensors, and other electronic devices requiring customizable electric field outputs.

Possible Prior Art

One possible prior art for this technology could be the use of ferroelectric capacitors in memory devices, but the specific implementation of vertically stacked capacitors with varying thicknesses for different electric field outputs may be a novel aspect of this innovation.

How does this technology compare to existing memory devices in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing memory devices in terms of performance and efficiency.

What are the potential challenges or limitations of implementing this technology in practical electronic devices?

This article does not address the potential challenges or limitations of implementing this technology in practical electronic devices.

Original Abstract Submitted

A memory device includes a substrate and vertically stacked ferroelectric capacitors formed on the substrate. A first ferroelectric capacitor has a different capacitive output than a second ferroelectric capacitor when a constant voltage is applied. First and second electrodes are in electrical contact with the vertically stacked ferroelectric capacitors. In some instances, a first capacitor plate in the first ferroelectric capacitor and a second capacitor plate in the second ferroelectric capacitor have different thicknesses. The different thicknesses allow the capacitive output for each capacitor to produce different electric field outputs. Accordingly, a combination of different output signals can be produced based on different threshold voltage levels for each capacitor contributing to the output.