International business machines corporation (20240105605). SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK simplified abstract

SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Daniel Charles Edelstein of White Plains NY (US)

Rajiv Joshi of Yorktown Heights NY (US)

Ravikumar Ramachandran of Pleasantville NY (US)

Eric Miller of Watervliet NY (US)

SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105605 titled 'SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK

Simplified Explanation

The semiconductor structure described in the abstract includes a front-end-of-line level with field effect transistors connected to a back-end-of-line interconnect level. A backside power rail is embedded within a backside interlayer dielectric on the opposite side of the front-end-of-line level, connected to at least one field effect transistor. Additionally, backside field effect transistors are formed on a semiconductor layer above a passive device region, with the passive device region in contact with both the semiconductor layer and the back-end-of-line interconnect level.

• Front-end-of-line level with field effect transistors
• Back-end-of-line interconnect level on one side
• Backside power rail embedded in backside interlayer dielectric
• Backside power rail connected to at least one field effect transistor
• Backside field effect transistors formed on a semiconductor layer above a passive device region
• Passive device region in contact with semiconductor layer and back-end-of-line interconnect level

Potential Applications

The technology described in this patent application could be applied in the semiconductor industry for the development of advanced integrated circuits with improved power distribution and connectivity.

Problems Solved

This technology addresses the challenge of efficient power distribution and connectivity in semiconductor structures, particularly in complex integrated circuits with multiple levels of interconnects and transistors.

Benefits

- Enhanced power distribution efficiency - Improved connectivity between components - Potential for higher performance integrated circuits

Potential Commercial Applications

Optimizing power distribution and connectivity in semiconductor structures can benefit various industries, including electronics, telecommunications, and computing. The technology could be valuable for companies manufacturing advanced integrated circuits for a wide range of applications.

Possible Prior Art

One potential prior art in this field could be the development of backside power rails and interlayer dielectrics in semiconductor structures to improve power distribution and connectivity. Research and patents related to advanced integrated circuit design may also be relevant.

Unanswered Questions

How does this technology impact the overall performance of integrated circuits?

The abstract mentions improved power distribution and connectivity, but it would be interesting to know how these enhancements translate into tangible performance benefits for integrated circuits.

Are there any specific design considerations or limitations associated with implementing this technology?

While the abstract provides a general overview of the semiconductor structure, it would be helpful to understand any specific design considerations or limitations that engineers need to consider when implementing this technology in practical applications.

Original Abstract Submitted

a semiconductor structure includes a front-end-of-line level including a plurality of field effect transistors electrically connected to a back-end-of-line interconnect level. the back-end-of-line interconnect level is located on a first side of the front-end-of-line level. a backside power rail is embedded within a backside interlayer dielectric located on a second side of the front-end-of-line level opposing the first side of the front-end-of-line level. the backside power rail is electrically connected to at least one field effect transistor of the plurality of field effect transistors. at least one backside field effect transistor is formed on a first semiconductor layer disposed, at least in part, above a passive device region. a first side of the passive device region is in contact with the first semiconductor layer and a second side of the passive device region, opposing the first side, is in contact with the back-end-of-line interconnect level.