17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Brent A. Anderson of Jericho VT (US)

Kisik Choi of Watervliet NY (US)

Su Chen Fan of Cohoes NY (US)

Shogo Mochizuki of Mechanicville NY (US)

SON Nguyen of Schenectady NY (US)

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 17937967 titled 'FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

Simplified Explanation

The semiconductor device described in the abstract includes a field effect transistor (FET) with a unique structure for the source/drain (S/D) regions. The FET has a frontside S/D contact connected to the first S/D region and a backside S/D contact connected to the second S/D region.

• The FET includes a gate, a first S/D region, and a second S/D region.
• The frontside S/D contact extends vertically upward from the first S/D region.
• The second S/D region includes a conduit liner and an inner column that extends below the bottom surface of the wraparound gate.
• The backside S/D contact extends vertically downward from the second S/D region.

Potential Applications

The technology described in the patent application could be applied in the development of high-performance semiconductor devices for various electronic applications, such as integrated circuits, sensors, and communication devices.

Problems Solved

This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the design and structure of the source/drain regions in a field effect transistor.

Benefits

The innovative design of the source/drain regions in the FET can lead to enhanced device performance, increased reliability, and improved power efficiency in semiconductor applications.

Potential Commercial Applications

The technology has potential commercial applications in the semiconductor industry for the production of advanced electronic devices with superior performance and functionality.

Possible Prior Art

One possible prior art for this technology could be the development of other semiconductor devices with optimized source/drain regions to improve device performance and efficiency.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

The article does not provide a direct comparison between this technology and existing semiconductor device structures in terms of performance and efficiency.

What are the specific electronic applications that could benefit the most from this technology?

The article does not specify the specific electronic applications that could benefit the most from this technology.

Original Abstract Submitted

A semiconductor device includes a field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extend vertically upward from a top surface of the first S/D region. The FET further includes a second S/D region. The second S/D region includes a conduit liner and an inner column internal to the conduit liner that extends below a bottom surface of the wraparound gate. A backside S/D contact may be connected to and extend vertically downward from a bottom surface of the second S/D region.