17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation)

VTFET CIRCUIT WITH OPTIMIZED OUTPUT

Organization Name

International Business Machines Corporation

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Brent A. Anderson of Jericho VT (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Ruilong Xie of Niskayuna NY (US)

Albert M. Chu of Nashua NH (US)

Reinaldo Vega of Mahopac NY (US)

VTFET CIRCUIT WITH OPTIMIZED OUTPUT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17945498 titled 'VTFET CIRCUIT WITH OPTIMIZED OUTPUT

Simplified Explanation

The semiconductor device described in the abstract includes a configuration of vias and metallization tracks to provide an output.

• The first via level forms a bottom jumper for output.
• A first set of two or more first metallization tracks overlay the first via level.
• A second via level forms a first top jumper overlying the first set of metallization tracks.
• A second metallization track overlies the second via level.

Potential Applications

The technology described in this semiconductor device could be applied in various electronic devices such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology helps in improving the efficiency and performance of semiconductor devices by providing a structured configuration of vias and metallization tracks for better signal transmission.

Benefits

The benefits of this technology include enhanced signal output, improved reliability, and increased functionality of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for manufacturing advanced electronic components with higher performance and reliability.

Possible Prior Art

Prior art in semiconductor devices may include similar configurations of vias and metallization tracks for signal transmission in electronic circuits.

How does this technology compare to existing semiconductor device configurations in terms of signal transmission efficiency?

This article does not provide a direct comparison with existing semiconductor device configurations in terms of signal transmission efficiency. Further research or testing may be needed to evaluate the performance of this technology against existing solutions.

What are the potential limitations or drawbacks of implementing this technology in semiconductor devices?

The article does not address potential limitations or drawbacks of implementing this technology in semiconductor devices. Additional studies or analysis may be required to identify any challenges or constraints associated with the adoption of this innovation.

Original Abstract Submitted

A semiconductor device includes: a first via level forming a bottom jumper configured to provide an output; a first set of two or more first metallization tracks overlying the first via level; a second via level forming a first top jumper overlying the first set of two or more first metallization tracks; and a second metallization track overlying the second via level.