17955974. Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract (International Business Machines Corporation)
Contents
- 1 Self-Aligned Wafer Backside Gate Signal with Airgap
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Self-Aligned Wafer Backside Gate Signal with Airgap - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Self-Aligned Wafer Backside Gate Signal with Airgap
Organization Name
International Business Machines Corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Nicolas Jean Loubet of Guilderland NY (US)
Julien Frougier of Albany NY (US)
Self-Aligned Wafer Backside Gate Signal with Airgap - A simplified explanation of the abstract
This abstract first appeared for US patent application 17955974 titled 'Self-Aligned Wafer Backside Gate Signal with Airgap
Simplified Explanation
The semiconductor device described in the abstract includes a backside power line, a backside signal line, and an airgap between the two lines. The power line is located under a p-channel field effect transistor region and an n-channel field effect transistor region, while the signal line is located between the p-channel and n-channel regions.
- Backside power line located under p-channel and n-channel regions
- Backside signal line located between p-channel and n-channel regions
- Airgap between backside power line and backside signal line
Potential Applications
The technology described in this patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology helps in reducing interference between the power and signal lines, improving the overall performance and reliability of the semiconductor device.
Benefits
The airgap between the power and signal lines helps in minimizing crosstalk and noise, leading to better signal integrity and overall efficiency of the device.
Potential Commercial Applications
The technology could find applications in the electronics industry, particularly in the development of high-performance computing devices and communication systems.
Possible Prior Art
One possible prior art could be the use of isolation techniques in semiconductor devices to reduce interference between different components on the chip.
What materials are used to create the airgap between the power and signal lines?
The materials used to create the airgap could include insulating materials such as silicon dioxide or polymers.
How does the placement of the backside power line under the transistor regions affect the performance of the semiconductor device?
The placement of the power line under the transistor regions helps in minimizing parasitic capacitance and improving the efficiency of power distribution within the device.
Original Abstract Submitted
A semiconductor device includes a backside power line located under a p-channel field effect transistor region and an n-channel field effect transistor region; a backside signal line located between the p-channel field effect transistor region and the n-channel field effect transistor region; and an airgap between the backside power line and the backside signal line.
