International business machines corporation (20240096940). BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract

BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE

Organization Name

international business machines corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096940 titled 'BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE

Simplified Explanation

The microelectronic structure described in the abstract includes two transistors with multiple channel layers, separated by a dielectric bar. Each transistor has a source/drain located on opposite sides of the dielectric bar, with backside contacts connected to each source/drain.

• The structure consists of a first transistor with multiple first channel layers and a second transistor with multiple second channel layers.
• A dielectric bar is positioned between the first and second transistors.
• The first source/drain of the first transistor is located on one side of the dielectric bar, while the second source/drain of the second transistor is located on the opposite side.
• A first backside contact is connected to the first source/drain and in contact with one side of the dielectric bar.
• A second backside contact is connected to the second source/drain and in contact with the other side of the dielectric bar.

Potential Applications

The technology described in this patent application could be applied in the development of advanced microelectronic devices, such as high-performance integrated circuits and processors.

Problems Solved

This technology helps in improving the efficiency and performance of microelectronic devices by optimizing the layout and connectivity of transistors within the structure.

Benefits

The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in microelectronic devices.

Potential Commercial Applications

The technology could find applications in various industries, including semiconductor manufacturing, consumer electronics, telecommunications, and automotive electronics.

Possible Prior Art

One possible prior art for this technology could be the use of dielectric bars in microelectronic structures to isolate and optimize the performance of transistors.

How does this technology compare to existing transistor structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing transistor structures, so it is unclear how this technology stacks up against current solutions in the market.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world applications, leaving room for further exploration and analysis in this area.

Original Abstract Submitted

a microelectronic structure including a first transistor including a plurality a first channel layers. a second transistor including a plurality of second channel layers, where the first transistor is located adjacent to the second transistors. a dielectric bar located between the first transistor and the second transistor. a first source/drain of the first transistor is located on a first side of the dielectric bar and a second source/drain of the second transistor is located on a second side of the dielectric bar, where the first side is opposite the second side. a first backside contact connected to the first source/drain, where the first backside contact is in contact with first side of the dielectric bar. a second backside contact connected to the second source/drain, where the second backside contact is in contact with the second side of dielectric bar.