18232640. MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Chen Zhang of Santa Clara CA (US)

Julien Frougier of Albany NY (US)

Alexander Reznicek of Troy NY (US)

SHOGO Mochizuki of Mechanicville NY (US)

MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232640 titled 'MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES

Simplified Explanation

The abstract describes a patent application for a uniform moon-shaped bottom spacer for a VTFET (Vertical Tunneling Field Effect Transistor) device. The innovation involves replacing the bottom spacer of the device with a moon-shaped spacer that is epitaxially grown above a bottom source/drain region.

  • The replacement bottom spacer is accessed, removed, and then replaced with a moon-shaped spacer.
  • The moon-shaped spacer is grown epitaxially above the bottom source/drain region.
  • A trench is formed in the substrate and filled with a dielectric fill material that covers the replacement bottom spacer.
  • The uniform moon-shaped bottom spacer improves the performance and efficiency of the VTFET device.

Potential Applications

  • Semiconductor industry
  • Electronics manufacturing
  • Integrated circuit design

Problems Solved

  • Inefficient performance of VTFET devices
  • Lack of uniformity in bottom spacers
  • Difficulties in accessing and replacing bottom spacers

Benefits

  • Improved performance and efficiency of VTFET devices
  • Uniformity in the shape and structure of bottom spacers
  • Simplified process for accessing and replacing bottom spacers


Original Abstract Submitted

A uniform moon-shaped bottom spacer for a VTFET device is provided utilizing a replacement bottom spacer that is epitaxially grown above a bottom source/drain region. After filling a trench that is formed into a substrate with a dielectric fill material that also covers the replacement bottom spacer, the replacement bottom spacer is accessed, removed and then replaced with a moon-shaped bottom spacer.

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