International business machines corporation (20240096983). SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract

SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Kangguo Cheng of Schenectady NY (US)

Julien Frougier of Albany NY (US)

Chanro Park of Clifton Park NY (US)

Min Gyu Sung of Latham NY (US)

SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096983 titled 'SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA

Simplified Explanation

The semiconductor structure described in the abstract includes a backside contact structure with increased contact area for improved performance of field effect transistors. Here are some key points to explain the innovation:

• Plurality of source/drain regions within a field effect transistor
• Each source/drain region has an inverted v-shaped area in the top portion
• Backside power rail connected to at least one source/drain region through a backside metal contact
• Backside metal contact wraps around the top portion of the source/drain region
• Tip of the top portion of the source/drain regions points towards the backside power rail
• First epitaxial layer isolates at least another source/drain region from the backside power rail

Potential Applications

The technology described in the patent application can be applied in the following areas:

• Power electronics
• Semiconductor devices
• Integrated circuits

Problems Solved

This technology addresses the following issues:

• Improved contact area for better performance
• Enhanced electrical connection between source/drain regions and backside power rail

Benefits

The benefits of this technology include:

• Increased efficiency of field effect transistors
• Enhanced reliability of semiconductor structures

Potential Commercial Applications

The technology has potential commercial applications in:

• Electronics manufacturing industry
• Semiconductor fabrication companies
• Power management systems

Possible Prior Art

One possible prior art for this technology could be the use of backside contacts in semiconductor structures for improved electrical connections.

How does this technology compare to existing backside contact structures in terms of performance and reliability?

The article does not provide a direct comparison with existing backside contact structures in terms of performance and reliability.

What are the specific manufacturing processes involved in creating the increased contact area in the backside contact structure?

The article does not delve into the specific manufacturing processes involved in creating the increased contact area in the backside contact structure.

Original Abstract Submitted

a semiconductor structure having a backside contact structure with increased contact area includes a plurality of source/drain regions within a field effect transistor, each of the plurality of source/drain regions includes a top portion having an inverted v-shaped area. a backside power rail is electrically connected to at least one source/drain region through a backside metal contact. the backside metal contact wraps around a top portion of the at least one source/drain region. a tip of the top portion of the plurality of source/drain regions points towards the backside power rail with the top portion of the at least one source/drain region being in electric contact with the backside metal contact. a first epitaxial layer is in contact with a top portion of at least another source/drain region adjacent to the at least one source/drain region for electrically isolating the at least another source/drain region from the backside power rail.