17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)

Backside BPR/BSPDN Intergration with Backside Local Interconnect.

Organization Name

International Business Machines Corporation

Inventor(s)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Huai Huang of Clifton Park NY (US)

Ruilong Xie of Niskayuna NY (US)

Backside BPR/BSPDN Intergration with Backside Local Interconnect. - A simplified explanation of the abstract

This abstract first appeared for US patent application 17961281 titled 'Backside BPR/BSPDN Intergration with Backside Local Interconnect.

Simplified Explanation

The semiconductor device described in the patent application includes backside power rails and backside local signal lines. The power rails are located between N-channel field effect transistor to N-channel field effect transistor spaces, and between at least one P-channel field effect transistor to P-channel field effect transistor space. The local signal lines are located between the backside power rails.

• Backside power rails located between N-channel and P-channel field effect transistor spaces
• Backside local signal lines located between the backside power rails

Potential Applications

This technology could be applied in:

• Integrated circuits
• Semiconductor devices
• Power management systems

Problems Solved

This technology helps in:

• Efficient power distribution
• Signal transmission optimization
• Reduction of interference

Benefits

The benefits of this technology include:

• Improved performance
• Enhanced reliability
• Better signal integrity

Potential Commercial Applications

This technology could be commercially applied in:

• Consumer electronics
• Automotive industry
• Telecommunications sector

Possible Prior Art

There is no known prior art for this specific configuration of backside power rails and local signal lines.

Unanswered Questions

How does this technology impact overall power consumption in semiconductor devices?

This article does not delve into the specific details of power consumption and efficiency improvements brought about by the described technology.

Are there any limitations to the scalability of this innovation in larger semiconductor devices?

The article does not address any potential limitations or challenges that may arise when implementing this technology in larger scale semiconductor devices.

Original Abstract Submitted

A semiconductor device includes backside power rails located between N channel field effect transistor to N channel field effect transistor spaces, and between at least one P channel field effect transistor to P channel field effect transistor space; and backside local signal lines located between the backside power rails.