17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Original Abstract Submitted
DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Albert M. Chu of Nashua NH (US)
Carl Radens of LaGrangeville NY (US)
Brent A. Anderson of Jericho VT (US)
DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17931319 titled 'DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL
Simplified Explanation
The present invention describes a semiconductor device with two nanodevices arranged parallel to each other along a common axis, each consisting of three sections with gate cut regions in between.
- The semiconductor device includes a first nanodevice and a second nanodevice.
- The second nanodevice is positioned adjacent to and parallel to the first nanodevice along a common axis.
- Both nanodevices have three sections: a first section, a second section, and a third section.
- Gate cut regions are located between the sections of each nanodevice.
- The dimensions of the gate cut regions vary along a different axis.
- A middle section contact is located in the middle gate cut region.
Potential Applications
This technology could be applied in:
- Nanoelectronics
- Quantum computing
- Advanced sensors
Problems Solved
This technology helps in:
- Improving semiconductor device performance
- Enhancing nanoscale device integration
- Increasing computational efficiency
Benefits
The benefits of this technology include:
- Higher processing speeds
- Greater energy efficiency
- Miniaturization of electronic devices
Potential Commercial Applications
Optimizing Semiconductor Devices for Enhanced Performance
Original Abstract Submitted
According to the embodiment of the present invention, a semiconductor device includes a first nanodevice and a second nanodevice. The second nanodevice is located adjacent to and parallel to the first nanodevice along a first axis. The first nanodevice and the second nanodevice each include a first section, a second section, and a third section. A first gate cut region is located between the first sections of the first nanodevice and the second nanodevice. A middle gate cut region is located between the second sections of the first nanodevice and the second nanodevice. A third gate cut region is located between the third sections of the first nanodevice and the second nanodevice. The middle gate cut region has different dimensions along a second axis than the first gate cut region and the third gate cut region. A middle section contact is located in the middle gate cut region.
