International business machines corporation (20240096891). SELF-ALIGNED BACKSIDE CONTACT simplified abstract

SELF-ALIGNED BACKSIDE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of ALBANY NY (US)

Min Gyu Sung of Latham NY (US)

Chanro Park of Clifton Park NY (US)

Juntao Li of Cohoes NY (US)

SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096891 titled 'SELF-ALIGNED BACKSIDE CONTACT

Simplified Explanation

The patent application describes a CMOS apparatus with a semiconductor substrate, a source/drain structure, a backside interconnect layer, a backside contact, and a sigma-profiled dielectric structure.

• The semiconductor substrate has a frontside and a backside.
• The source/drain structure is located at the frontside of the substrate.
• The backside interconnect layer is positioned at the backside of the substrate.
• The backside contact penetrates the substrate to connect the source/drain structure to the backside interconnect layer.
• The sigma-profiled dielectric structure insulates the backside contact from the substrate on both sides.

Potential Applications

This technology could be applied in the manufacturing of advanced CMOS devices for various electronic applications.

Problems Solved

This innovation solves the problem of efficiently connecting the source/drain structure to the backside interconnect layer while maintaining proper insulation.

Benefits

The benefits of this technology include improved performance, reliability, and efficiency in CMOS devices.

Potential Commercial Applications

Potential commercial applications of this technology could include semiconductor manufacturing companies looking to enhance their CMOS device production processes.

Possible Prior Art

One possible prior art could be the use of different dielectric materials for insulation in semiconductor devices.

Unanswered Questions

1. What specific manufacturing processes are required to implement this technology? 2. Are there any limitations or drawbacks to using a sigma-profiled dielectric structure in CMOS devices?

Original Abstract Submitted

a cmos apparatus includes a semiconductor substrate that has a frontside and a backside opposite the frontside; a source/drain structure, which is disposed at the frontside of the substrate and has a backside that is adjacent to the substrate and a frontside that is opposite the backside of the source/drain structure; a backside interconnect layer, which is disposed at the backside of the substrate; a backside contact, which penetrates the substrate and electrically connects the source/drain structure to the backside interconnect layer; and a sigma-profiled dielectric structure that insulates first and second sides of the backside contact from the substrate.