International business machines corporation (20240120369). HIGH DENSITY TRENCH CAPACITOR simplified abstract
Contents
- 1 HIGH DENSITY TRENCH CAPACITOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH DENSITY TRENCH CAPACITOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HIGH DENSITY TRENCH CAPACITOR
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Kangguo Cheng of Schenectady NY (US)
Chanro Park of Clifton Park NY (US)
Min Gyu Sung of Latham NY (US)
HIGH DENSITY TRENCH CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120369 titled 'HIGH DENSITY TRENCH CAPACITOR
Simplified Explanation
The semiconductor structure described in the abstract includes a capacitor structure with first and second electrode layers separated by a dielectric layer, all partially disposed in a trench of an interlayer dielectric layer. A spacer is also present on the first electrode layer, and a contact is connected to the second electrode layer and the spacer within the trench.
- The semiconductor structure includes a capacitor structure with first and second electrode layers separated by a dielectric layer.
- The capacitor structure is at least partially disposed in a trench of an interlayer dielectric layer.
- The top surface of the first electrode layer is below the top surface of the second electrode layer and the dielectric layer.
- A spacer is disposed on the first electrode layer.
- A contact is disposed in the trench and connected to the second electrode layer and the spacer.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced memory devices, such as DRAM or flash memory.
Problems Solved
This technology solves the problem of increasing the capacitance density in semiconductor devices by efficiently utilizing the available space within the device.
Benefits
The benefits of this technology include improved performance and efficiency of semiconductor devices, leading to faster and more reliable electronic products.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of high-performance memory chips for various electronic devices, contributing to the advancement of the semiconductor industry.
Possible Prior Art
One possible prior art for this technology could be the use of similar capacitor structures in semiconductor devices, but with different configurations or materials.
Unanswered Questions
How does this technology compare to existing capacitor structures in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing capacitor structures in semiconductor devices.
What are the specific materials used in the construction of the capacitor structure described in the patent application?
The article does not mention the specific materials used in the construction of the capacitor structure.
Original Abstract Submitted
a semiconductor structure includes a capacitor structure at least partially disposed in a trench of an interlayer dielectric layer. the capacitor structure includes first and second electrode layers separated by a dielectric layer. a top surface of the first electrode layer is below a top surface of the second electrode layer and the dielectric layer. a spacer is disposed on the first electrode layer and a contact is disposed in the trench and connected to the second electrode layer and the spacer.
