International business machines corporation (20240112984). METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract
Contents
- 1 METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing power distribution methods in semiconductor devices?
- 1.11 What are the potential challenges in implementing this technology on a larger scale in semiconductor manufacturing?
- 1.12 Original Abstract Submitted
METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN
Organization Name
international business machines corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Kisik Choi of Watervliet NY (US)
METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112984 titled 'METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN
Simplified Explanation
The semiconductor device described in the abstract includes power rails formed in the backside of a wafer, with connections to transistors through via-to-backside power rail contacts. Here are some key points to explain the innovation:
- Power rails are formed in the backside of the wafer for improved connectivity.
- Transistors are connected to power rails through via-to-backside power rail contacts.
- The gate contact partially vertically overlaps a gate cut region between transistors for efficient power distribution.
Potential Applications
The technology described in this patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This innovation solves the problem of efficient power distribution in semiconductor devices, improving overall performance and reliability.
Benefits
The benefits of this technology include enhanced connectivity, improved power distribution, and potentially increased efficiency in semiconductor devices.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the development of advanced electronic devices with improved power management capabilities.
Possible Prior Art
One possible prior art could be the use of traditional front-side power rail connections in semiconductor devices, which may not be as efficient as the backside power rail connections described in this patent application.
Unanswered Questions
How does this technology compare to existing power distribution methods in semiconductor devices?
The article does not provide a direct comparison to existing power distribution methods, leaving the reader to wonder about the specific advantages of this innovation over traditional approaches.
What are the potential challenges in implementing this technology on a larger scale in semiconductor manufacturing?
The article does not address the potential challenges in scaling up the implementation of this technology, leaving room for speculation on the practicality and feasibility of mass production.
Original Abstract Submitted
a semiconductor device includes power rails formed in a backside of a wafer. a gate of a first transistor on the wafer is connected to a power rail through a via-to-backside power rail (vbpr) gate contact. a source/drain (s/d) region of a second transistor on the wafer is connected to a power rail through a vbpr s/d contact. the vbpr gate contact partially vertically overlaps a gate cut region between the first transistor and the second transistor.
