International business machines corporation (20240105611). BACKSIDE SIGNAL INTEGRATION THROUGH VIA TO SIGNAL LINE CONNECTION simplified abstract

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BACKSIDE SIGNAL INTEGRATION THROUGH VIA TO SIGNAL LINE CONNECTION

Organization Name

international business machines corporation

Inventor(s)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Brent A. Anderson of Jericho VT (US)

Kisik Choi of Watervliet NY (US)

Ruilong Xie of Niskayuna NY (US)

BACKSIDE SIGNAL INTEGRATION THROUGH VIA TO SIGNAL LINE CONNECTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105611 titled 'BACKSIDE SIGNAL INTEGRATION THROUGH VIA TO SIGNAL LINE CONNECTION

Simplified Explanation

The semiconductor device described in the abstract includes an isolation region and at least one transistor with a gate region placed on the isolation region. A via is positioned through a part of the isolation region and on a signal line, with a gate contact on the gate region. The via connects the gate contact to the gate region through the signal line.

  • Isolation region and transistor with gate region
  • Via connecting gate contact to gate region and signal line

Potential Applications

This technology could be applied in various electronic devices such as smartphones, computers, and other consumer electronics that utilize semiconductor components.

Problems Solved

This innovation helps in improving the efficiency and performance of semiconductor devices by providing a more compact and reliable connection between the gate contact and the signal line.

Benefits

The benefits of this technology include enhanced functionality, increased integration density, improved signal transmission, and overall better performance of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for manufacturing advanced integrated circuits, microprocessors, memory chips, and other electronic components.

Possible Prior Art

One possible prior art could be the use of traditional methods for connecting gate contacts to signal lines in semiconductor devices, which may not be as efficient or reliable as the method described in this patent application.

Unanswered Questions

How does this technology compare to existing methods of connecting gate contacts to signal lines in semiconductor devices?

This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages and disadvantages of this new approach.

What are the specific performance improvements that can be expected from implementing this technology in semiconductor devices?

The article does not delve into the specific performance enhancements that can be achieved by using this innovation, leaving a gap in understanding the potential impact on device performance.


Original Abstract Submitted

a semiconductor device includes an isolation region and at least one transistor including a gate region, wherein the gate region is disposed on the isolation region. a via is disposed through a portion of the isolation region and on a signal line. a gate contact is disposed on the gate region. the via is connected to the gate contact and the signal line is connected to the gate region through the via and the gate contact.