17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)

VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS

Organization Name

International Business Machines Corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

REINALDO Vega of Mahopac NY (US)

VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17957599 titled 'VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS

Simplified Explanation

The semiconductor device described in the patent application includes a semiconductor channel with a top source/drain structure on top and a bottom source/drain structure underneath. The bottom source/drain structure consists of a doped semiconductor part and a conductor part, where the conductor part covers the bottom surface of the doped semiconductor part.

• Simplified Explanation:

  - The patent application describes a semiconductor device with a unique bottom source/drain structure that includes a doped semiconductor part and a conductor part.

• Potential Applications:

  - Advanced semiconductor devices
  - High-performance electronics

• Problems Solved:

  - Enhancing device performance
  - Improving conductivity and efficiency

• Benefits:

  - Increased speed and efficiency
  - Enhanced overall device performance

• Potential Commercial Applications:

  - Semiconductor industry
  - Electronics manufacturing sector

• Possible Prior Art:

  - Previous patents related to semiconductor device structures and source/drain configurations

Questions:

1. How does the bottom source/drain structure improve the overall performance of the semiconductor device?

  - The bottom source/drain structure enhances conductivity and efficiency by utilizing a combination of a doped semiconductor part and a conductor part.

2. What sets this semiconductor device apart from existing technologies in the market?

  - This semiconductor device stands out due to its unique bottom source/drain structure, which includes a combination of a doped semiconductor part and a conductor part, leading to improved device performance and efficiency.

Original Abstract Submitted

Semiconductor device and methods of forming the same include a semiconductor channel. A top source/drain structure is on the semiconductor channel. A bottom source/drain structure is under the semiconductor channel. The bottom source/drain structure includes a doped semiconductor part and a conductor part, with the conductor part covering a bottom surface of the doped semiconductor part.