International business machines corporation (20240096952). NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract
Contents
- 1 NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Nicolas Jean Loubet of Guilderland NY (US)
NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096952 titled 'NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS
Simplified Explanation
The semiconductor structure described in the patent application consists of two nanosheet stacks, each comprising nanosheet channel layers and dielectric isolation layers, with a gate dielectric layer on top.
- The semiconductor structure includes a first nanosheet stack with one or more nanosheet channel layers and a dielectric isolation layer.
- It also includes a second nanosheet stack with one or more nanosheet channel layers and a dielectric isolation layer.
- A gate dielectric layer is placed over one of the dielectric isolation layers.
Potential Applications
This technology could be used in:
- Advanced semiconductor devices
- High-performance electronic components
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving power efficiency
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Reduction in power consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications industry
Possible Prior Art
There may be prior art related to:
- Nanosheet semiconductor structures
- Dielectric isolation layers in semiconductor devices
Unanswered Questions
How does this technology compare to traditional semiconductor structures?
This article does not provide a direct comparison between this technology and traditional semiconductor structures.
What are the specific manufacturing processes involved in creating this semiconductor structure?
The article does not delve into the specific manufacturing processes involved in creating this semiconductor structure.
Original Abstract Submitted
a semiconductor structure comprises a first nanosheet stack comprising one or more first nanosheet channel layers and a first dielectric isolation layer over the one or more first nanosheet channel layers, a second nanosheet stack comprising one or more second nanosheet channel layers and a second dielectric isolation layer over the one or more second nanosheet channel layers, and a gate dielectric layer disposed over a top surface of one of the first dielectric isolation layer and the second dielectric isolation layer.
