International business machines corporation (20240113232). EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE simplified abstract

EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE

Organization Name

international business machines corporation

Inventor(s)

Daniel Schmidt of Niskayuna NY (US)

Ruilong Xie of Niskayuna NY (US)

Alexander Reznicek of Troy NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113232 titled 'EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE

Simplified Explanation

The semiconductor device described in the abstract includes a stack of sheet semiconductor layers with source and drain regions on opposing sides of a channel region. It also features a first contact to the upper sheet portion of the source and drain regions, an extended epitaxial semiconductor region in contact with the lower sheet portion of the source/drain regions, and a second contact in direct contact with the upper surface of the extended epitaxial semiconductor region. A notch may be present in the upper surface of the extended semiconductor region to increase contact surface to the second contact.

• Stack of sheet semiconductor layers
• Source and drain regions on opposing sides of a channel region
• First contact to upper sheet portion of source and drain regions
• Extended epitaxial semiconductor region in contact with lower sheet portion of source/drain regions
• Second contact in direct contact with upper surface of extended epitaxial semiconductor region
• Notch in upper surface of extended semiconductor region

Potential Applications

This technology could be applied in:

• High-performance electronic devices
• Power management systems
• Integrated circuits

Problems Solved

This technology helps to:

• Improve contact between different semiconductor regions
• Enhance overall device performance
• Increase efficiency in electronic systems

Benefits

The benefits of this technology include:

• Enhanced conductivity
• Improved reliability
• Better overall device performance

Potential Commercial Applications

This technology could be commercially applied in:

• Semiconductor manufacturing industry
• Electronics industry
• Research and development sector

Possible Prior Art

One possible prior art for this technology could be the use of extended epitaxial semiconductor regions in semiconductor devices to improve contact and performance.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

What are the specific manufacturing processes involved in creating this semiconductor device?

The article does not detail the specific manufacturing processes involved in creating this semiconductor device.

Original Abstract Submitted

a semiconductor device that includes a stack of sheet semiconductor layers, and source and drain regions positioned on opposing sides of a channel region in the stack of sheet semiconductor layers. a first contact is present to an upper sheet portion of the source and drain regions for the stack of sheet semiconductor layers. an extended epitaxial semiconductor region is present in contact with the lower sheet portion of the source/drain regions for the stack of sheet semiconductor layers. a second contact is present in direct contact with an upper surface of the extended epitaxial semiconductor region. a notch may be present in the upper surface of the extended semiconductor region to increase contact surface to the second contact.