International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Brent A. Anderson of Jericho VT (US)

Kisik Choi of Watervliet NY (US)

Su Chen Fan of Cohoes NY (US)

Shogo Mochizuki of Mechanicville NY (US)

SON Nguyen of Schenectady NY (US)

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240112985 titled 'FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

Simplified Explanation

The semiconductor device described in the abstract is a nanostructure field effect transistor (FET) with specific features related to the source/drain (S/D) regions and contacts.

• The FET includes a gate and a first S/D region with a frontside S/D contact extending vertically upward from the top surface of the first S/D region.
• There is a second S/D region that extends below the bottom surface of the gate, with a backside S/D contact extending vertically downward from the bottom surface of the second S/D region.

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Nanoelectronics
• Integrated circuits
• Sensing devices

Problems Solved

This technology addresses the following issues:

• Improved performance of field effect transistors
• Enhanced contact design for nanostructures
• Better control of current flow in semiconductor devices

Benefits

The benefits of this technology include:

• Increased efficiency in electronic devices
• Enhanced reliability of semiconductor components
• Potential for miniaturization of circuits

Potential Commercial Applications

The potential commercial applications of this technology could include:

• Consumer electronics
• Telecommunications
• Medical devices

Possible Prior Art

One possible prior art for this technology could be the development of nanostructure FETs with different contact configurations or materials.

How does this technology compare to existing FET designs in terms of performance and scalability?

This article does not provide a direct comparison with existing FET designs in terms of performance and scalability. Further research or testing would be needed to evaluate these aspects.

What are the specific manufacturing processes required to implement this technology in semiconductor devices?

The article does not detail the specific manufacturing processes required to implement this technology in semiconductor devices. Additional information on fabrication techniques would be necessary to understand the practical implementation of the innovation.

Original Abstract Submitted

a semiconductor device includes a nanostructure field effect transistor (fet). the fet includes a gate and a first source or drain (s/d) region. a frontside s/d contact may be connected to and extends vertically upward from a top surface of the first s/d region. the fet further includes a second s/d region. the second s/d region extends below a bottom surface of the gate. a backside s/d contact may be connected to and extend vertically downward from a bottom surface of the second s/d region.