17543028. GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Nicolas Loubet of GUILDERLAND NY (US)

Andrew M. Greene of Slingerlands NY (US)

Veeraraghavan S. Basker of Schenectady NY (US)

Balasubramanian S. Pranatharthiharan of Santa Clara CA (US)

GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17543028 titled 'GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES

Simplified Explanation

The abstract describes a patent application for a structure called CFET (complementary field effect transistor) that includes two CFET devices formed on a substrate. Each CFET device consists of a top FET and a bottom FET, both having at least one nanosheet channel. The gate of each CFET device has a continuous horizontal dielectric covering its entire length. The top FET of each CFET has a first polarity, while the bottom FET has a second polarity. Additionally, the top FET of the first CFET includes a first work function metal, and the top FET of the second CFET includes a second work function metal.

• CFET structure with two CFET devices formed on a substrate
• Each CFET device consists of a top FET and a bottom FET with nanosheet channels
• Continuous horizontal dielectric covers the entire length of the gate
• Top FET of each CFET has a first polarity, while the bottom FET has a second polarity
• First CFET's top FET includes a first work function metal, and the second CFET's top FET includes a second work function metal

Potential Applications

• Integrated circuits
• Digital logic circuits
• Memory devices
• Microprocessors

Problems Solved

• Improved performance and efficiency of CFET devices
• Enhanced control over the flow of electrical current
• Reduction of power consumption and heat generation

Benefits

• Higher speed and lower power consumption in electronic devices
• Improved integration of CFET devices in various applications
• Enhanced functionality and reliability of integrated circuits
• Potential for smaller and more efficient electronic devices

Original Abstract Submitted

A CFET (complementary field effect transistor) structure including a substrate, a first CFET formed above the substrate, and a second CFET formed above the substrate. The first CFET includes a top FET and a bottom FET. The top FET and bottom FET of the first CFET include at least one nanosheet channel. A gate affiliated with the first CFET and the second CFET devices includes a continuous horizontal dielectric over the entire length of the gate. The top FET of each CFET has a first polarity. The bottom FET of each a CFET comprises a second polarity. The top FET of the first CFET includes a first work function metal, and the top FET of the second CFET includes a second work function metal.