17643395. ADVANCED METAL INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
ADVANCED METAL INTERCONNECT
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ashim Dutta of Clifton Park NY (US)
Chih-Chao Yang of Glenmont NY (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
Ruilong Xie of Niskayuna NY (US)
ADVANCED METAL INTERCONNECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17643395 titled 'ADVANCED METAL INTERCONNECT
Simplified Explanation
Abstract
A method is described for depositing metal layers on a substrate and forming metal lines and vias to create electrical connections. A dielectric layer is also deposited to insulate the metal lines and vias.
Patent/Innovation Explanation
- Metal lines and vias are created by etching a first metal layer on a substrate.
- A second metal layer is deposited on the exposed portions of the substrate between the metal lines.
- Vertical vias are formed by patterning the first metal layer.
- A dielectric layer is deposited to insulate the metal lines and vias.
Potential Applications
- Integrated circuits
- Microprocessors
- Semiconductor devices
- Electronic components
Problems Solved
- Efficient and precise formation of metal lines and vias on a substrate
- Creation of vertical vias for electrical connections
- Insulation of metal lines and vias to prevent short circuits
Benefits
- Improved performance and reliability of electronic devices
- Higher density of electrical connections
- Cost-effective manufacturing process
Original Abstract Submitted
A first metal layer is deposited on a substrate. The first metal layer is etched to form one or more metal lines and expose portions of the substrate. A second metal layer is deposited on the exposed portions of the substrate between the one or more metal lines. The first metal layer is patterned to form one or more vertical vias. A dielectric layer is deposited on the exposed portions of the substrate between an exposed sidewalls of the first metal layer and an exposed sidewalls of the second metal layer.
