International business machines corporation (20240113125). POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract
Contents
- 1 POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS
Organization Name
international business machines corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Kangguo Cheng of Schenectady NY (US)
POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113125 titled 'POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS
Simplified Explanation
The semiconductor chip device described in the abstract includes a power delivery network on the backside of the substrate, with dummy transistors and a power gating transistor used to transfer power to analog or digital circuit elements.
- The device utilizes a backside power delivery network for efficient power transfer.
- Dummy transistors are strategically placed in the circuit to optimize power distribution.
- A power gating transistor controls the transfer of power from the dummy transistors to the functional circuit elements.
- By using backside power delivery, more space is available on the front side of the chip for functional devices.
Potential Applications
The technology described in this patent application could be applied in various semiconductor devices where efficient power delivery is crucial, such as mobile devices, IoT devices, and automotive electronics.
Problems Solved
This technology solves the problem of optimizing power distribution within a semiconductor chip, allowing for more efficient use of space and resources.
Benefits
The benefits of this technology include improved power efficiency, reduced footprint of functional devices, and enhanced overall performance of semiconductor chips.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the development of more efficient and compact electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of power gating transistors in semiconductor devices to control power distribution.
Unanswered Questions
How does this technology impact the overall power consumption of semiconductor devices?
This technology could potentially reduce power consumption by optimizing power delivery within the chip, but specific data on power savings would be needed for a more accurate assessment.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?
The scalability and cost implications of integrating this technology into mass production of semiconductor chips could be significant factors to consider.
Original Abstract Submitted
a semiconductor chip device includes a substrate with a back end of line layer and a backside power delivery network. an input power line is electrically coupled to the backside power delivery network. dummy transistors are positioned in a circuit with analog or digital circuit elements. a power gating transistor is positioned in the circuit between the dummy transistors and the analog or digital circuit elements. power from the power input line is provided from the backside power delivery network, through the dummy transistors, and controlled by the power gating transistor for transfer to the analog or digital circuit elements. the device uses a backside delivery of power to the area of the dummy transistors to transfer power into the analog or digital circuit elements, which leaves more of the front side footprint for functional devices.
