International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract
Contents
- 1 BACKSIDE POWER RAIL WITH TIGHT SPACE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BACKSIDE POWER RAIL WITH TIGHT SPACE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
BACKSIDE POWER RAIL WITH TIGHT SPACE
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Koichi Motoyama of Clifton Park NY (US)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Chih-Chao Yang of Glenmont NY (US)
BACKSIDE POWER RAIL WITH TIGHT SPACE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105606 titled 'BACKSIDE POWER RAIL WITH TIGHT SPACE
Simplified Explanation
The abstract describes a patent application for a power rail structure in a semiconductor device, where a first power rail is directly below and connected to a p-fet region, and a second power rail is directly below and connected to an n-fet region. The power rails have vertical side surfaces that taper in opposite directions from each other.
- The first power rail is formed by subtractive metal etch, directly below and connected to a source-drain epitaxy region of a p-fet region.
- The second power rail is formed by a damascene process, directly below and connected to a source-drain epitaxy region of an n-fet region.
- Both power rails have vertical side surfaces that taper in opposite directions from each other.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of more efficient and compact power rail structures in integrated circuits.
Problems Solved
This innovation solves the problem of optimizing power distribution in semiconductor devices by providing a power rail structure that is directly connected to specific regions of the transistor, improving overall performance and efficiency.
Benefits
The benefits of this technology include improved power distribution, enhanced performance of the semiconductor device, and potentially reduced power consumption.
Potential Commercial Applications
The technology could be commercially applied in the production of advanced integrated circuits for various electronic devices, such as smartphones, computers, and other consumer electronics.
Possible Prior Art
One possible prior art could be the use of traditional power rail structures in semiconductor devices, which may not be as optimized or efficient as the structure described in this patent application.
Unanswered Questions
How does this power rail structure compare to existing power distribution methods in terms of efficiency and performance?
The article does not provide a direct comparison between this new power rail structure and existing methods in terms of efficiency and performance.
Are there any potential challenges or limitations in implementing this new power rail structure in semiconductor devices?
The article does not address any potential challenges or limitations that may arise in implementing this new power rail structure in semiconductor devices.
Original Abstract Submitted
a first power rail directly below and connected to a source-drain epitaxy region of a positive field effect transistor (p-fet) region, a second power rail directly below and connected to a source-drain epitaxy region of a negative field effect transistor (n-fet) region, the first power rail and the second power rail each comprise vertical side surfaces which taper in an opposite direction from each other. forming a first power rail by subtractive metal etch, where the first power rail is directly below and connected to a source-drain epitaxy region of a p-fet region and forming a second power rail by damascene process, where the second power rail is directly below and connected to a source-drain epitaxy region of an n-fet region, the first power rail and the second power rail each comprise vertical side surfaces which taper in an opposite direction from each other.
