17963031. SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract (International Business Machines Corporation)

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SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION

Organization Name

International Business Machines Corporation

Inventor(s)

Koichi Motoyama of Clifton Park NY (US)

Ruilong Xie of Niskayuna NY (US)

Kisik Choi of Watervliet NY (US)

Chih-Chao Yang of Glenmont NY (US)

SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17963031 titled 'SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION

Simplified Explanation

The semiconductor structure described in the patent application includes a shallow trench isolation region within a semiconductor substrate, along with a conductive spacer within the shallow trench isolation region.

  • The semiconductor structure features a shallow trench isolation region that helps isolate different components on the semiconductor substrate.
  • A conductive spacer is placed within the shallow trench isolation region to provide additional functionality or connectivity within the semiconductor structure.

Potential Applications

The technology described in this patent application could be applied in:

  • Integrated circuits
  • Semiconductor devices

Problems Solved

This technology helps address the following issues:

  • Isolation of components on a semiconductor substrate
  • Enhancing connectivity within semiconductor structures

Benefits

The benefits of this technology include:

  • Improved performance of semiconductor devices
  • Enhanced functionality of integrated circuits

Potential Commercial Applications

This technology could be utilized in various commercial applications such as:

  • Consumer electronics
  • Telecommunications industry

Possible Prior Art

One possible prior art for this technology could be the use of shallow trench isolation regions in semiconductor structures for isolation purposes.

Unanswered Questions

How does the conductive spacer enhance the functionality of the semiconductor structure?

The conductive spacer could potentially provide additional connectivity between components within the semiconductor structure, but the specific details of this enhancement are not provided in the abstract.

What specific semiconductor devices could benefit most from this technology?

While the abstract mentions semiconductor structures in general, it would be helpful to know which specific types of semiconductor devices could see the most significant improvements from implementing this technology.


Original Abstract Submitted

A semiconductor structure includes a shallow trench isolation region disposed within a semiconductor substrate, and a conductive spacer disposed within the shallow trench isolation region.