17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)

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REPLACEMENT BURIED POWER RAIL

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Stuart Sieg of Albany NY (US)

Somnath Ghosh of Clifton Park NY (US)

Kisik Choi of Watervliet NY (US)

Kevin Shawn Petrarca of Newburgh NY (US)

REPLACEMENT BURIED POWER RAIL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17527229 titled 'REPLACEMENT BURIED POWER RAIL

Simplified Explanation

The abstract describes a semiconductor structure that includes a device region with two source/drain (S/D) regions and a buried power rail (BPR) underneath. The BPR has a larger critical dimension than the distance between the S/D regions. There is also a via-contact-to-buried power rail (VBPR) connecting the BPR and the S/D regions.

  • The semiconductor structure includes a device region with two S/D regions and a BPR.
  • The BPR has a larger critical dimension than the distance between the S/D regions.
  • A VBPR is present to connect the BPR and the S/D regions.

Potential Applications

  • This semiconductor structure can be used in various electronic devices such as integrated circuits and microprocessors.
  • It can be applied in power management systems, where efficient power distribution is crucial.

Problems Solved

  • The larger critical dimension of the BPR compared to the distance between the S/D regions helps to improve power distribution and reduce resistance.
  • The presence of the VBPR ensures a reliable connection between the BPR and the S/D regions.

Benefits

  • The semiconductor structure allows for efficient power distribution, leading to improved performance and reduced power loss.
  • The larger critical dimension of the BPR helps to minimize resistance and enhance overall device reliability.


Original Abstract Submitted

Embodiments disclosed herein describe a semiconductor structure. The semiconductor structure may include a device region with a first source/drain (S/D) and a second S/D. The semiconductor structure may also include a buried power rail (BPR) under the device region. A critical dimension of the BPR may be larger than a distance between the first S/D and the second S/D. The semiconductor structure may also include a via-contact-to-buried power rail (VBPR) between the BPR and the S/D.

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