International business machines corporation (20240096978). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Tsung-Sheng Kang of Ballston Lake NY (US)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Chih-Chao Yang of Glenmont NY (US)

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096978 titled 'COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT

Simplified Explanation

The abstract describes a CMOS apparatus with an n-doped field effect transistor (NFET) and a p-doped field effect transistor (PFET), each with a source and drain structure. A common backside drain contact connects the NFET and PFET drain structures to a backside interconnect layer.

• NFET and PFET in CMOS apparatus
• Common backside drain contact for NFET and PFET

Potential Applications

The technology described in this patent application could be applied in:

• Integrated circuits
• Semiconductor devices
• Electronics manufacturing

Problems Solved

This technology helps in:

• Improving connectivity in CMOS devices
• Enhancing performance of NFET and PFET

Benefits

The benefits of this technology include:

• Increased efficiency in circuit design
• Enhanced reliability of semiconductor devices

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

One possible prior art could be the use of separate drain contacts for NFET and PFET in CMOS devices.

How does this technology impact power consumption in electronic devices?

This article does not delve into the specific effects of this technology on power consumption in electronic devices.

What are the manufacturing costs associated with implementing this technology?

The article does not provide information on the manufacturing costs of incorporating this technology into semiconductor devices.

Original Abstract Submitted

a cmos apparatus includes an n-doped field effect transistor (nfet); and a p-doped field effect transistor (pfet), each of which has a source structure and a drain structure. a common backside drain contact, which is disposed at the backside surface of the nfet and the pfet, electrically connects the nfet drain structure and the pfet drain structure to a backside interconnect layer.