17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation)
Contents
- 1 DIODES IN NANOSHEET TECHNOLOGY
DIODES IN NANOSHEET TECHNOLOGY
Organization Name
International Business Machines Corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Kangguo Cheng of Schenectady NY (US)
Julien Frougier of ALBANY NY (US)
Chanro Park of Clifton Park NY (US)
Min Gyu Sung of Latham NY (US)
DIODES IN NANOSHEET TECHNOLOGY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17946002 titled 'DIODES IN NANOSHEET TECHNOLOGY
Simplified Explanation
The nanosheet diode described in the patent application consists of a bookend structure and a central structure, each containing semiconductor materials and nanosheets that connect various blocks within the structure.
- The bookend structure includes a first semiconductor that is doped as either the anode or the cathode of the diode, with a left block, right block, and a first stack of spaced-apart nanosheets connecting them horizontally.
- The central structure includes a second semiconductor doped as the other of the anode or cathode, with a front block, rear block, and a second stack of nanosheets interleaved crosswise into spaces between the first stack of nanosheets, connecting the front and rear blocks.
- The bookend structure makes direct contact with the top, bottom, and end surfaces of the second stack of nanosheets in the central structure.
Potential Applications
The nanosheet diode technology could be applied in:
- High-speed electronics
- Energy-efficient devices
- Sensor technology
Problems Solved
This technology addresses issues such as:
- Improving diode efficiency
- Enhancing electronic device performance
- Enabling miniaturization of electronic components
Benefits
The benefits of this technology include:
- Increased speed and efficiency in electronic devices
- Reduction in power consumption
- Enhanced reliability and durability of electronic components
Potential Commercial Applications
With its potential applications in high-speed electronics and energy-efficient devices, this nanosheet diode technology could be utilized in industries such as:
- Semiconductor manufacturing
- Consumer electronics
- Telecommunications
Possible Prior Art
One possible prior art for this technology could be the development of nanosheet transistors, which have been researched and implemented in various electronic devices.
Unanswered Questions
How does the performance of this nanosheet diode compare to traditional diode structures?
The article does not provide a direct comparison between the performance of this nanosheet diode and traditional diode structures. Further research or testing may be needed to determine the efficiency and effectiveness of this new technology.
What are the potential challenges in scaling up production of nanosheet diodes for commercial applications?
The article does not address the challenges that may arise in scaling up production of nanosheet diodes for commercial use. Factors such as cost, manufacturing processes, and material availability could impact the feasibility of large-scale production.
Original Abstract Submitted
A nanosheet diode includes a bookend structure and a central structure. The bookend includes a first semiconductor that is doped as one of the anode and the cathode of the diode, and includes a left block, a right block, and a first stack of spaced-apart nanosheets that horizontally connect the left and right blocks. The central structure includes a second semiconductor that is doped as the other of the anode and the cathode of the diode, and includes a front block, a rear block, and a second stack of nanosheets that are interleaved crosswise into spaces between the first stack of spaced-apart nanosheets and that horizontally connect the front and rear blocks. The bookend structure directly contacts top, bottom, and end surfaces of the second stack of nanosheets of the central structure.
