International business machines corporation (20240105554). TRANSISTORS WITH VIA-TO-BACKSIDE POWER RAIL SPACERS simplified abstract

TRANSISTORS WITH VIA-TO-BACKSIDE POWER RAIL SPACERS

Organization Name

international business machines corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Liqiao Qin of Albany NY (US)

Devika Sarkar Grant of Amsterdam NY (US)

Nikhil Jain of Apple Valley MN (US)

Prabudhya Roy Chowdhury of Albany NY (US)

Sagarika Mukesh of Albany NY (US)

Kisik Choi of Watervliet NY (US)

Ruilong Xie of Niskayuna NY (US)

TRANSISTORS WITH VIA-TO-BACKSIDE POWER RAIL SPACERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105554 titled 'TRANSISTORS WITH VIA-TO-BACKSIDE POWER RAIL SPACERS

Simplified Explanation

The semiconductor structure described in the abstract includes a source/drain region, a frontside source/drain contact, a via-to-backside power rail, and a backside power rail connected to the via-to-backside power rail.

• The semiconductor structure features a source/drain region for electrical connections.
• A frontside source/drain contact is placed on the source/drain region for easy access.
• A via-to-backside power rail is positioned on the frontside source/drain contact and a portion of the source/drain region.
• A backside power rail is connected to the via-to-backside power rail for power distribution.

Potential Applications

This technology could be applied in the development of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved

This innovation helps improve power distribution and electrical connectivity in semiconductor structures, enhancing overall device performance and reliability.

Benefits

The use of this technology can lead to more efficient power management, increased device functionality, and enhanced durability of semiconductor devices.

Potential Commercial Applications

One potential commercial application of this technology could be in the manufacturing of smartphones, tablets, and other consumer electronics where high-performance semiconductor components are essential.

Possible Prior Art

Prior art may include similar semiconductor structures with source/drain regions, frontside contacts, and power rails, but the specific configuration described in this patent application may be unique.

How does this technology compare to existing power distribution methods in semiconductor structures?

This article does not provide a direct comparison to existing power distribution methods in semiconductor structures.

What are the potential cost implications of implementing this technology in semiconductor manufacturing processes?

The article does not address the potential cost implications of implementing this technology in semiconductor manufacturing processes.

Original Abstract Submitted

a semiconductor structure includes a source/drain region; a frontside source/drain contact disposed on the source/drain region, a via-to-backside power rail disposed on the frontside source/drain contact and on a portion of the source/drain region, and a backside power rail connected to the via-to-backside power rail.