17896278. Barrier-Less Jumper Structure for Line-to-Line Connections simplified abstract (International Business Machines Corporation)

Barrier-Less Jumper Structure for Line-to-Line Connections

Organization Name

International Business Machines Corporation

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Brent A. Anderson of Essex Junction VT (US)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Ruilong Xie of Niskayuna NY (US)

Reinaldo Vega of Mahopac NY (US)

Barrier-Less Jumper Structure for Line-to-Line Connections - A simplified explanation of the abstract

This abstract first appeared for US patent application 17896278 titled 'Barrier-Less Jumper Structure for Line-to-Line Connections

Simplified Explanation

The semiconductor apparatus described in the patent application includes a substrate with two conductive features made of a conductive material, surrounded by a dielectric material. An interconnect made of the same conductive material connects the two conductive features, extending through the dielectric material and below the features.

• The semiconductor apparatus includes a substrate.
• There are two conductive features on the substrate, made of a conductive material.
• A dielectric material partially surrounds the conductive features.
• An interconnect made of the same conductive material connects the two features, passing through the dielectric material.

Potential Applications

• Semiconductor manufacturing
• Integrated circuits
• Electronics industry

Problems Solved

• Improved connectivity between conductive features
• Enhanced performance of semiconductor devices
• Better integration of components in electronic devices

Benefits

• Increased efficiency in semiconductor manufacturing
• Higher reliability of integrated circuits
• Improved functionality of electronic devices

Original Abstract Submitted

A semiconductor apparatus includes a substrate; a first conductive feature disposed on the substrate, the first conductive feature comprising a conductive material; a second conductive feature disposed on the substrate, the second conductive feature comprising the conductive material; a dielectric material at least partially surrounding the first conductive feature and the second conductive feature; and an interconnect between the first conductive feature and the second conductive feature, the interconnect comprising the conductive material integral with the first conductive feature and the second conductive feature and extending through the dielectric material and below the first conductive feature and the second conductive feature.