17945418. SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract (International Business Machines Corporation)

SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI

Organization Name

International Business Machines Corporation

Inventor(s)

Chen Zhang of Guilderland NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Heng Wu of Santa Clara CA (US)

Min Gyu Sung of Latham NY (US)

SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI - A simplified explanation of the abstract

This abstract first appeared for US patent application 17945418 titled 'SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI

Simplified Explanation

The semiconductor structure described in the abstract is a nanosheet transistor with a backside contact positioned on a silicon layer of a wafer, with a dielectric liner located between the backside contact and the silicon layer. The dielectric liner is positioned below gate spacers of the transistor and is vertically aligned with the gate spacers and inner spacers of the nanosheet stack.

• Backside contact positioned on a silicon layer of a wafer
• Dielectric liner located between the backside contact and the silicon layer
• Dielectric liner positioned below gate spacers of the transistor
• Dielectric liner vertically aligned with gate spacers and inner spacers of the nanosheet stack

Potential Applications

This technology could be applied in the development of more efficient and compact semiconductor devices, such as advanced transistors for high-performance computing and communication systems.

Problems Solved

This innovation helps in improving the performance and reliability of nanosheet transistors by optimizing the structure and alignment of key components, leading to enhanced functionality and reduced power consumption.

Benefits

- Enhanced performance of nanosheet transistors - Improved reliability and durability of semiconductor devices - Reduced power consumption and increased efficiency

Potential Commercial Applications

"Optimizing Nanosheet Transistor Structure for Enhanced Performance"

Possible Prior Art

There may be prior art related to the optimization of transistor structures for improved performance and efficiency, but specific examples are not provided in the abstract.

Unanswered Questions

How does the dielectric liner impact the overall performance of the nanosheet transistor?

The abstract mentions the dielectric liner being vertically aligned with key components of the transistor, but it does not elaborate on the specific effects or benefits of this alignment on the transistor's performance.

Are there any limitations or drawbacks associated with the proposed semiconductor structure?

While the abstract highlights the advantages of the described structure, it does not mention any potential limitations or challenges that may arise in implementing this technology.

Original Abstract Submitted

A semiconductor structure is presented including a backside contact of a nanosheet transistor positioned on a silicon (Si) layer of a wafer and a dielectric liner disposed between the backside contact and the Si layer such that the dielectric liner is located below gate spacers of the nanosheet transistor. The backside contact is closer to a backside of the wafer than a frontside of the wafer. The dielectric liner is vertically aligned with the gate spacers and the dielectric liner is vertically aligned with inner spacers of a nanosheet stack of the nanosheet transistor.