17806514. SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Min Gyu Sung of Latham NY (US)
CHANRO Park of CLIFTON PARK NY (US)
SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17806514 titled 'SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY
Simplified Explanation
The patent application describes a semiconductor structure with rectangular or square-shaped contact vias in a semiconductor material. These contact vias have straight edges parallel to the crystal planes of the material and corners pointing in a direction orthogonal to the crystal planes.
- The semiconductor structure includes rectangular or square-shaped contact vias in a semiconductor material.
- The contact vias have straight edges parallel to the crystal planes of the material.
- The corners of the contact vias point in a direction orthogonal to the crystal planes.
- This design provides a larger contact area compared to conventional round-shaped contact vias with the same width.
Potential Applications
- Semiconductor devices
- Integrated circuits
- Microprocessors
- Power electronics
Problems Solved
- Limited contact area in conventional round-shaped contact vias
- Improved electrical performance and reliability
Benefits
- Larger contact area for improved electrical performance
- Enhanced reliability of semiconductor devices
- Potential for higher power handling capabilities
Original Abstract Submitted
An approach provides a semiconductor structure with one or more rectangular or square-shaped contact vias in a semiconductor material. The semiconductor device includes one of the first element of the semiconductor device element under the square-shaped contact via or the second element of the semiconductor device element above the square-shaped contact via. The semiconductor structure includes the square-shaped via in the semiconductor material that has straight edges that are parallel to one or more of the (110) crystal planes of the semiconductor material and the square-shaped contact vias has corners pointing in a direction orthogonal to one or more of the (100) crystal planes of the semiconductor material. The square-shaped contact via provides a larger contact area that a conventional round-shaped contact via with a diameter matching the width of the square-shaped contact via.
